參數(shù)資料
型號: MC9S12A256MPV
廠商: MOTOROLA INC
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 25 MHz, MICROCONTROLLER, PQFP112
封裝: LQFP-112
文件頁數(shù): 6/128頁
文件大小: 2062K
代理商: MC9S12A256MPV
MC9S12DT256 Device User Guide V03.00
103
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
NOTE:
All values shown in Table A-12 are target values and subject to further extensive
characterization.
3. Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus.
Refer to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.
4. Burst Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP.
6. Minimum time, if first word in the array is not blank
7. Maximum time to complete check on an erased block
Table A-12 NVM Reliability Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1C
Data Retention at an average junction temperature of
TJavg = 70°C
tNVMRET
15
Years
2
C Flash number of Program/Erase cycles
nFLPE
1000
10,000
Cycles
3C
EEPROM number of Program/Erase cycles
(–40
°C
T
J 0°C)
nEEPE
10,000
Cycles
4C
EEPROM number of Program/Erase cycles
(0
°C < T
J 140°C)
nEEPE
100,000
Cycles
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