參數(shù)資料
型號： MC9S12DB128BVFU
廠商： Motorola, Inc.
英文描述： MC9S12DT128B
中文描述： MC9S12DT128B
文件頁數(shù)： 97/124頁
文件大小： 577K
代理商： MC9S12DB128BVFU
MC9S12DT128B Device User Guide — V01.07
97
A.3 NVM, Flash and EEPROM
NOTE:
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
both Flash and EEPROM.
A.3.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency f
NVMOSC
is required for performing program or erase operations. The NVM modules
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as f
NVMOP
.
The minimum program and erase times shown in
Table A-11
are calculated for maximum f
NVMOP
and
maximum f
bus
. The maximum times are calculated for minimum f
NVMOP
and a f
bus
of 2MHz.
A.3.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency f¨
NVMOP
and can be calculated according to the following formula.
t
swpgm
f
NVMOP
A.3.1.2 Burst Programming
ThisappliesonlytotheFlashwhereupto32wordsinarowcanbeprogrammedconsecutivelyusingburst
programming by keeping the command pipeline filled. The time to program a consecutive word can be
calculated as:
The time to program a whole row is:
Burst programming is more than 2 times faster than single word programming.
9
--------1
25
1
f
bus
----------
+
=
t
bwpgm
4
1
f
NVMOP
---------------------
9
1
f
bus
----------
+
=
t
brpgm
t
swpgm
31 t
bwpgm
+
=
相關(guān)PDF資料
PDF描述
MC9S12DB128BVPV MC9S12DT128B
MC9S12DG128B MC9S12DT128B
MC9S12DG128BCFU MC9S12DT128B
MC9S12DG128BCPV MC9S12DT128B
MC9S12DG128BMFU MC9S12DT128B
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC9S12DB128CFU 制造商:Rochester Electronics LLC 功能描述:16BIT MC9S12DB CISC 128KB FLASH 50MHZ 3.3/5V 80PQFP - Bulk
MC9S12DB128CFUE 功能描述:16位微控制器 - MCU 128K FLASH HCS12 RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時鐘頻率:24 MHz 程序存儲器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風格:SMD/SMT
MC9S12DB128CPV 功能描述:IC MCU 128K FLASH 25MHZ 112-LQFP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:HCS12 標準包裝:250 系列:56F8xxx 核心處理器:56800E 芯體尺寸:16-位 速度:60MHz 連通性:CAN，SCI，SPI 外圍設(shè)備:POR，PWM，溫度傳感器，WDT 輸入/輸出數(shù):21 程序存儲器容量:40KB（20K x 16） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:6K x 16 電壓 - 電源 (Vcc/Vdd):2.25 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 6x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:48-LQFP 包裝:托盤 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323
MC9S12DB128CPVE 功能描述:16位微控制器 - MCU MARLIN2 PB FREE RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時鐘頻率:24 MHz 程序存儲器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風格:SMD/SMT
MC9S12DB128CPVER 功能描述:IC MCU 128K FLASH 25MHZ 112-LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:HCS12 標準包裝:1 系列:87C 核心處理器:MCS 51 芯體尺寸:8-位 速度:16MHz 連通性:SIO 外圍設(shè)備:- 輸入/輸出數(shù):32 程序存儲器容量:8KB（8K x 8） 程序存儲器類型:OTP EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4 V ~ 6 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:外部 工作溫度:0°C ~ 70°C 封裝/外殼:44-DIP 包裝:管件 其它名稱:864285
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*