參數(shù)資料
型號： MC9S12KC128VFU
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： Silver Mica Capacitor; Capacitance:12000pF; Capacitance Tolerance: 5%; Series:CD30; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述： 微控制器
文件頁數(shù)： 100/124頁
文件大?。?/td> 2125K
代理商： MC9S12KC128VFU
MC9S12DP512 Device Guide V01.23
100
The setup time can be ignored for this operation.
A.3.1.4 Mass Erase
Erasing a NVM block takes:
The setup time can be ignored for this operation.
A.3.1.5 Blank Check
The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the
first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup
of the command.
Table A-11 NVM Timing Characteristics
Conditions are shown in
Table A-4
unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1
D External Oscillator Clock
f
NVMOSC
0.5
-
50
1
NOTES
:
1. Restrictions for oscillator in crystal mode apply!
2. Minimum Programming times are achieved under maximum NVM operating frequency f
NVMOP
and maximum bus frequency
f
bus
.
3. Maximum Erase and Programming times are achieved under particular combinations of f
NVMOP
and bus frequency f
bus
.
Refer to formulae in Sections
Section A.3.1.1 Single Word Programming- Section A.3.1.4 Mass Erase
for guidance.
4. Row Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency f
NVMOP
.
6. Minimum time, if first word in the array is not blank
7. Maximum time to complete check on an erased block
MHz
2
D Bus frequency for Programming or Erase Operations
f
NVMBUS
1
-
-
MHz
3
D Operating Frequency
f
NVMOP
150
-
200
kHz
4
P Single Word Programming Time
t
swpgm
46
2
-
74.5
3
μ
s
5
D Flash Row Programming consecutive word
4
t
bwpgm
20.4
(2)
-
31
(3)
μ
s
6
D Flash Row Programming Time for 64 Words
(4)
t
brpgm
1331.2
(2)
-
2027.5
(3)
μ
s
7
P Sector Erase Time
t
era
20
5
-
26.7
(3)
ms
8
P Mass Erase Time
t
mass
100
(5)
-
133
(3)
ms
9
D Blank Check Time Flash per block
t
check
11
6
-
65546
7
t
cyc
10
D Blank Check Time EEPROM per block
t
check
11
(6)
-
2058
(7)
t
cyc
t
mass
20000
1
f
NVMOP
---------------------
≈
t
check
location t
cyc
10 t
cyc
+
≈
F
For More Information On This Product,
Go to: www.freescale.com
n
.
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