參數(shù)資料
型號: MCF5212LCVM80J
廠商: Freescale Semiconductor
文件頁數(shù): 21/56頁
文件大?。?/td> 0K
描述: IC MCU 256K FLASH 80MHZ 81MAPBGA
標準包裝: 240
系列: MCF521x
核心處理器: Coldfire V2
芯體尺寸: 32-位
速度: 80MHz
連通性: I²C,SPI,UART/USART
外圍設備: DMA,LVD,POR,PWM,WDT
輸入/輸出數(shù): 56
程序存儲器容量: 256KB(256K x 8)
程序存儲器類型: 閃存
RAM 容量: 32K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 81-LBGA
包裝: 托盤
MCF5213 ColdFire Microcontroller, Rev. 3
Electrical Characteristics
Freescale Semiconductor
28
2.3
Thermal Characteristics
Table 22 lists thermal resistance values.
Table 21. Typical Active Current Consumption Specifications
Characteristic
Symbol
Typical1
Active
(SRAM)
1 Tested at room temperature with CPU polling a status register. All clocks were off except the UART and CFM (when
running from flash memory).
Typical1
Active
(Flash)
Peak2
2 Peak current measured with all modules active, and default drive strength with matching load.
Unit
1 MHz core & I/O
IDD
—3.48
mA
8 MHz core & I/O
7.28
13.37
19.02
16 MHz core & I/O
12.08
25.08
35.66
64 MHz core & I/O
40.14
54.62
85.01
80 MHz core & I/O
49.2
64.09
100.03
RAM standby supply current
Normal operation: VDD > VSTBY - 0.3 V
Transient condition: VSTBY - 0.3 V > VDD > VSS + 0.5 V
Standby operation: VDD < VSS + 0.5 V
ISTBY
N/A3
N/A3
3 Due to the errata “Non-functional RAM Standby Supply” in the MCF5213 Device Errata, V
STBY should be connected
directly to VDD and cannot be used for RAM standby operation.
μA
mA
μA
Analog supply current
Normal operation
Low-power stop
IDDA
16
50
mA
μA
Table 22. Thermal Characteristics
Characteristic
Symbol
Value
Unit
100 LQFP
Junction to ambient, natural convection
Single layer board (1s)
θ
JA
531,2
°C/W
Junction to ambient, natural convection
Four layer board (2s2p)
θ
JA
391,3
°C/W
Junction to ambient, (@200 ft/min)
Single layer board (1s)
θ
JMA
421,3
°C/W
Junction to ambient, (@200 ft/min)
Four layer board (2s2p)
θ
JMA
331,3
°C/W
Junction to board
θ
JB
254
°C/W
Junction to case
θ
JC
95
°C/W
Junction to top of package
Natural convection
Ψ
jt
26
°C/W
Maximum operating junction temperature
Tj
105
oC
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