參數(shù)資料
型號(hào): MCF52258CVN66J
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 21/46頁(yè)
文件大小: 0K
描述: IC MCU 512KB FLASH 144MAPBGA
標(biāo)準(zhǔn)包裝: 160
系列: MCF5225x
核心處理器: Coldfire V2
芯體尺寸: 32-位
速度: 66MHz
連通性: CAN,EBI/EMI,以太網(wǎng),I²C,QSPI,UART/USART,USB OTG
外圍設(shè)備: DMA,LVD,POR,PWM,WDT
輸入/輸出數(shù): 96
程序存儲(chǔ)器容量: 512KB(512K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 64K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 144-LBGA
包裝: 托盤(pán)
Electrical Characteristics
MCF52259 ColdFire Microcontroller, Rev. 5
Freescale
28
2.4
Flash Memory Characteristics
The flash memory characteristics are shown in Table 9 and Table 10.
16 Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8. Board
temperature is measured on the top surface of the board near the package.
17 Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
18 Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
in conformance with Psi-JT.
The average chip-junction temperature (TJ) in C can be obtained from:
(1)
Where:
TA
= ambient temperature,
C
JA
= package thermal resistance, junction-to-ambient,
C/W
PD
= PINT PI/O
PINT
= chip internal power, IDD VDD, W
PI/O
= power dissipation on input and output pins — user determined, W
For most applications PI/O PINT and can be ignored. An approximate relationship between PD and TJ (if PI/O is neglected) is:
(2)
Solving equations 1 and 2 for K gives:
K = PD (TA + 273 C) + JMA PD
2 (3)
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations (1) and (2) iteratively for
any value of TA.
Table 9. SGFM Flash Program and Erase Characteristics
(VDD = 3.0 to 3.6 V)
Parameter
Symbol
Min
Typ
Max
Unit
System clock (read only)
fsys(R)
0—
66.67 or 801
1
Depending on packaging; see the orderable part number summary (Table 2).
MHz
System clock (program/erase)2
2 Refer to the flash memory section for more information (Section 2.4, “Flash Memory Characteristics”)
fsys(P/E)
0.15
66.67 or 801
MHz
Table 10. SGFM Flash Module Life Characteristics
(VDD = 3.0 to 3.6 V)
Parameter
Symbol
Value
Unit
Maximum number of guaranteed program/erase cycles1 before failure
1 A program/erase cycle is defined as switching the bits from 1
0 1.
P/E
10,0002
Cycles
Data retention at average operating temperature of 85
C
Retention
10
Years
TJ
TA
PD JMA
+
=
PD
KTJ 273C
+
=
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