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參數(shù)資料
| 型號(hào)： | MCH6644 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH6, 6 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MCH6644 |
MCH6644
No.8959-1/6
Features
The MCH6644 incorporates an N-channel MOSFET and a P-channel MOSFET thereby enabling high-density
mounting.
Excellent ON-resistance characteristic.
Best suited for load switches.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
1.8
--1.2
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
7.2
--4.8
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
0.78
1.3
S
RDS(on)1
ID=1A, VGS=10V
160
210
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=0.5A, VGS=4V
300
420
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
95
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
22
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
16
pF
Marking : WU
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8959
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
O1405PE MS IM TB-00001813
MCH6644
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCH6644 | 1800 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6650 | 350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6650 | 350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6731 | 1000 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MCH6731 | 1000 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH6644-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
| MCH6646 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6646-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 2A MCPH6 |
| MCH6649 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6649-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 30V 0.2A SC-82 |
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