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參數(shù)資料
| 型號： | MCL103C-TR3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCHOTTKY DIODE MICROMELF-E2 - Tape and Reel |
| 中文描述： | Schottky (Diodes & Rectifiers) 400mA 20 Volt 15 Amp IFSM |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MCL103C-TR3 |
MCL103A, MCL103B, MCL103C
Vishay Semiconductors
www.vishay.com
Rev. 1.7, 09-May-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85632
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Forward Current vs. Forward Voltage
Fig. 2 -
Forward Current vs. Forward Voltage
Fig. 3 -
Reverse Current vs. Junction Temperature
Fig. 4 -
Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MCL103A
MCL103B
MCL103C
MCL103A
MCL103B
MCL103C
SYMBOL
V
(BR)
V
(BR)
V
(BR)
I
R
I
R
I
R
V
F
V
F
C
D
MIN.
40
30
20
TYP.
MAX.
UNIT
V
V
V
μA
μA
μA
mV
mV
pF
Reverse breakdown voltage
I
R
= 10 μA
Leakage current
V
R
= 30 V
V
R
= 20 V
V
R
= 10 V
I
F
= 20 mA
I
F
= 200 mA
V
R
= V, f = 1 MHz
I
F
= I
= 50 mA to 200 mA,
recovery to 0.1 I
R
5
5
5
Forward voltage drop
370
600
Diode capacitance
50
Reverse recovery time
t
rr
10
ns
I
F
w
a
u
r
0 100 200 300 400 500 600 700 800 900 1000
V
F
- For
w
ard
V
oltage (m
V
)
16765
1000
100
10
1
0.1
0.01
0.001
I
F
w
a
u
r
0
1
2
3
4
5
0.0
0.5
V
F
- For
w
ard
V
oltage (
V
)
1.0
1.5
2.0
16766
1
10
100
1000
10 000
20
40
60
80
0
100
120
140
160
T
j
- J
u
nction Temperat
u
re (°C)
16767
I
R
v
e
u
r
0
5
10
15
20
25
30
0
10
15
20
25
30
V
R
- Re
v
erse
V
oltage (
V
)
16768
C
D
f = 1 MHz
5
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