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參數(shù)資料
| 型號： | MCL4151-TR3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE, HALOGEN FREE AND ROHS COMPLIANT, GLASS, MICROMELF-2, Signal Diode |
| 中文描述： | Diodes (General Purpose, Power, Switching) 75 Volt 200mA 2.0 Amp IFSM |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 146K |
| 代理商： | MCL4151-TR3 |
www.vishay.com
2
Document Number 85567
Rev. 1.9, 20-Aug-10
MCL4151
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Test condition
Symbol
Value
Unit
Junction to ambient air
Mounted on epoxy-glass hard
tissue, fig. 4,
35 μm copper clad, 0.9 mm
2
copper area per electrode
R
thJA
500
K/W
Junction temperature
T
j
175
°C
Storage temperature range
T
stg
- 65 to + 175
°C
Test condition
I
F
= 50 mA
V
R
= 50 V
V
R
= 50 V, T
j
= 150 °C
I
R
= 5 μA, t
p
/T = 0.01, t
p
= 0.3 ms
V
R
= 0, f = 1 MHz, V
HF
= 50 mV
I
F
= I
R
= 10 mA, i
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100
Ω
Symbol
V
F
I
R
I
R
V
(BR)
C
D
t
rr
Min.
Typ.
880
Max.
1000
Unit
mV
Reverse voltage
50
nA
50
μA
Breakdown voltage
75
V
Diode capacitance
2
pF
Reverse recovery time
4
ns
t
rr
2
ns
Figure 1. Reverse Current vs. Junction Temperature
0
40
8
0
120
160
0.01
0.1
1
10
100
I
v
e
u
r
μ
A
R
T
j
- J
u
nction Temperat
u
re (°C)
200
94 9151
V
R
= 50
V
Scattering Limit
Figure 2. Forward Current vs. Forward Voltage
0
0.4
0.
8
1.2
1.6
0.1
1
10
100
1000
I
w
a
u
r
F
V
- For
w
ard
V
oltage (
V
)
F
2.0
94 9152
T = 25 °C
T = 100 °C
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