參數(shù)資料
型號： MCL4448-TR3
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Diode Small Signal Switching 100V 0.2A 2-Pin MicroMELF T/R
中文描述： Diodes (General Purpose, Power, Switching) 100 Volt 100mA 2.0 Amp IFSM
文件頁數(shù)： 2/4頁
文件大小： 79K
代理商： MCL4448-TR3
MCL4148, MCL4448
Vishay Semiconductors
www.vishay.com
Rev. 2.1, 01-Aug-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85566
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Reverse Current vs. Junction Temperature
Fig. 2 -
Forward Current vs. Forward Voltage
Fig. 3 -
Reverse Current vs. Reverse Voltage
Fig. 4 -
Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 5 mA
I
F
= 50 mA
I
F
= 100 mA
V
R
= 20 V
V
R
= 20 V, T
j
= 150 °C
V
R
= 75 V
I
R
= 100 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 0 V, f = 1 MHz,
V
HF
= 50 mV
Rectification effiency
V
HF
= 2 V, f = 100 MHz
I
F
= I
= 10 mA,
i
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100
SYMBOL
MCL4448
MCL4148
MCL4448
SYMBOL
V
F
V
F
V
F
I
R
I
R
I
R
MIN.
0.620
TYP.
MAX.
0.720
1
1
25
50
5
UNIT
V
V
V
nA
μA
μA
Forward voltage
0.860
0.930
Reverse current
Breakdown voltage
V
(BR)
100
V
Diode capacitance
C
D
4
pF
r
45
%
Reverse recovery time
t
rr
8
ns
t
rr
4
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I
w
a
u
r
F
V
F
- For
w
ard
V
oltage (
V
)
2.0
16641
MCL 4148
Scattering Limit
T
j
= 25 °C
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I
F
-
w
a
u
r
V
F
- For
w
ard
V
oltage (
V
)
2.0
16643
MCL 4448
Scattering Limit
T
j
= 25
°
C
1
10
100
1000
I
R
-
v
e
u
r
V
R
- Re
v
erse
V
oltage (
V
)
10
1
100
94 9098
T
j
= 25 °C
Scattering Limit
0.1
1
10
0
0.5
1.0
1.5
2.0
3.0
C
D
100
94 9099
2.5
V
R
- Re
v
erse
V
oltage (
V
)
f = 1 MHz
T
j
= 25 °C
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