參數(shù)資料
型號： MCM6229BBEJ35
廠商： MOTOROLA INC
元件分類： SRAM
英文描述： 256K x 4 Bit Static Random Access Memory
中文描述： 256K X 4 STANDARD SRAM, 35 ns, PDSO28
封裝： 0.300 INCH, SOJ-28
文件頁數(shù)： 2/8頁
文件大?。?/td> 125K
代理商： MCM6229BBEJ35
MCM6229BB
2
MOTOROLA FAST SRAM
TRUTH TABLE
E
G
W
Mode
I/O Pin
Cycle
Current
H
X
X
Not Selected
High–Z
—
ISB1, ISB2
ICCA
ICCA
ICCA
L
H
H
Output Disabled
High–Z
—
L
L
H
Read
Dout
Din
Read
L
X
L
Write
Write
H = High, L = Low, X = Don’t Care
ABSOLUTE MAXIMUM RATINGS
(See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage Relative to VSS
Voltage Relative to VSS for Any Pin
Except VCC
VCC
Vin, Vout
– 0.5 to 7.0
V
– 0.5 to VCC + 0.5
V
Output Current (per I/O)
Iout
±
20
mA
Power Dissipation
PD
Tbias
TA
Tstg
1.0
W
Temperature Under Bias
– 10 to + 85
°
C
Operating Temperature
0 to + 70
°
C
Storage Temperature
– 55 to + 150
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
VIH
VIL
4.5
5.5
V
Input High Voltage
2.2
VCC + 0.3**
0.8
V
Input Low Voltage
– 0.5*
V
*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
≤
20 ns).
**VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width
≤
20 ns).
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E = VIH, Vout = 0 to VCC)
AC Active Supply Current (Iout = 0 mA, all inputs =
VIL or VIH, VIL = 0, VIH
≥
3 V, cycle time
≥
tAVAV min,
VCC = max)
Ilkg(I)
Ilkg(O)
ICCA
—
±
1
μ
A
—
±
1
μ
A
MCM6229BB–15: tAVAV = 15 ns
MCM6229BB–17: tAVAV = 17 ns
MCM6229BB–20: tAVAV = 20 ns
MCM6229BB–25: tAVAV = 25 ns
MCM6229BB–35: tAVAV = 35 ns
—
—
—
—
—
155
150
135
130
110
mA
AC Standby Current (VCC = max, E = VIH, f = fmax)
MCM6229BB–15: tAVAV = 15 ns
MCM6229BB–17: tAVAV = 17 ns
MCM6229BB–20: tAVAV = 20 ns
MCM6229BB–25: tAVAV = 25 ns
MCM6229BB–35: tAVAV = 35 ns
ISB1
—
—
—
—
—
45
40
35
30
25
mA
CMOS Standby Current (E
≥
VCC – 0.2 V, Vin
≤
VSS + 0.2 V
or
≥
VCC – 0.2 V, VCC = max, f = 0 MHz)
ISB2
—
5
mA
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
VOL
VOH
—
0.4
V
2.4
—
V
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to these high–impedance
circuits.
This CMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCM6229BBEJ35R2 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 4 Bit Static Random Access Memory
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MCM6229BBXJ15R2 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 4 Bit Static Random Access Memory
MCM6229BBXJ17 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 4 Bit Static Random Access Memory
MCM6229BBXJ17R2 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 4 Bit Static Random Access Memory
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