參數(shù)資料
型號: MCM6323AYJ12
廠商: MOTOROLA INC
元件分類: DRAM
英文描述: 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM
中文描述: 64K X 16 STANDARD SRAM, 12 ns, PDSO44
封裝: 0.400 INCH, SOJ-44
文件頁數(shù): 3/12頁
文件大?。?/td> 181K
代理商: MCM6323AYJ12
MCM6323A
3
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V
±
0.3 V, TA = 0 to 70
°
C, Unless Otherwise Noted)
(TA = – 40 to + 85
°
C for Industrial Temperature Offering)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Power Supply Voltage
VDD
VIH
3.0
3.3
3.6
V
Input High Voltage
2.2
VDD + 0.3
**
V
Input Low Voltage
VIL
– 0.5
*
0.8
V
*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
20 ns) for I
20.0 mA.
**VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width
20 ns) for I
20.0 mA.
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Output Leakage Current (E = VIH, Vout = 0 to VDD)
Output Low Voltage
Ilkg(I)
Ilkg(O)
VOL
±
1.0
μ
A
±
1.0
μ
A
(IOL = + 4.0 mA)
(IOL = + 100
μ
A)
0.4
VSS + 0.2
V
Output High Voltage
(IOH = – 4.0 mA)
(IOH = – 100
μ
A)
VOH
2.4
VDD – 0.2
V
POWER SUPPLY CURRENTS
(See Note 1)
Parameter
Symbol
6323A–10
6323A–12
6323A–15
Unit
Notes
AC Active Supply Current (Iout = 0 mA)
(VDD = max, f = fmax)
Commerical
Industrial
IDDA
140
150
135
140
130
135
mA
2
AC Standby Current (E = VIH, VDD = max,
f = fmax)
Commerical
Industrial
ISB1
40
45
35
40
30
35
mA
2
CMOS Standby Current (VDD = max, f = 0 MHz,
E
VDD – 0.2 V, Vin
VSS + 0.2 V,
or
VDD – 0.2 V)
NOTES:
1. Typical current = 25
°
C @ 3.3 V.
2. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V, VIL = 0 V).
Commerical
Industrial
ISB2
5
5
5
5
5
5
mA
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Address Input Capacitance
Cin
Cin
CI/O
6
pF
Control Input Capacitance
6
pF
Input/Output Capacitance
8
pF
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