參數(shù)資料
型號(hào)： MCM63P636TQ200R
廠商： Motorola, Inc.
英文描述： Replaced by PTH12000W :
中文描述： 64K的× 36位流水線BurstRAM同步快速靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù)： 8/27頁(yè)
文件大?。?/td> 328K
代理商： MCM63P636TQ200R
MCM63P636
8
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS
(See Note 1)
Rating
Symbol
Value
Unit
Notes
Power Supply Voltage
VDD
VDDQ
VDDI
Vin
VSS – 0.5 to + 4.0
VSS – 0.5 to 2.5
VSS – 0.5 to 2.5
VSS – 0.5 to
VDDI + 0.5
V
I/O Supply Voltage
V
2, 3
Input Supply Voltage
V
2, 3
Voltage Relative to VSS for Any Pin
Except VDD
V
2, 4
Input Voltage (Three–State I/O)
VIT
VSS – 0.5 to
VDDQ + 0.5
V
2, 4
Output Current (per I/O)
Iout
PD
Tbias
Tstg
±
20
mA
Package Power Dissipation
2.75
W
5
Temperature Under Bias
– 10 to 85
°
C
Storage Temperature
– 55 to 125
°
C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. This is a steady–state DC parameter that is in effect after the power supply has
achieved its nominal operating level. Power sequencing is not necessary.
3. VDDI = VDDQ.
4. Max Vin and VIT are not to exceed Max VDD.
5. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
PACKAGE THERMAL CHARACTERISTICS — PBGA
Rating
Symbol
Max
Unit
Notes
Junction to Ambient (@ 200 lfm)
R
θ
JA
R
θ
JB
R
θ
JC
25
°
C/W
1, 2
Junction to Board (Bottom)
12
°
C/W
3
Junction to Case (Top)
10
°
C/W
4
PACKAGE THERMAL CHARACTERISTICS — TQFP
Rating
Symbol
Max
Unit
Notes
Junction to Ambient (@ 200 lfm)
R
θ
JA
R
θ
JB
R
θ
JC
25
°
C/W
1, 2
Junction to Board (Bottom)
17
°
C/W
3
Junction to Case (Top)
9
°
C/W
4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
相關(guān)PDF資料
PDF描述
MCM63P736 Replaced by PTH12000W :
MCM63P736TQ100R Replaced by PTH12000W :
MCM63P736TQ133R 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P736TQ66 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P736ZP133R 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCM63P636ZP200 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P636ZP200R 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P636ZP225 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P636ZP225R 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P636ZP250 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*