- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371087 > MCM63P736TQ100 (MOTOROLA INC) 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM PDF資料下載
參數(shù)資料
| 型號： | MCM63P736TQ100 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| 中文描述： | 128K X 36 CACHE SRAM, 5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 9/27頁 |
| 文件大?。?/td> | 328K |
| 代理商： | MCM63P736TQ100 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁當(dāng)前第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁
MCM63P636
9
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V
±
200 mV, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS AND DC CHARACTERISTICS
(Voltage Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VDDI
VDDQ
VIL
VIH
Ilkg(I)
Ilkg(O)
VOL
VOH
3.1
3.3
3.5
V
Input Supply Voltage
1.8
—
2.2
V
I/O Supply Voltage
1.8
—
2.2
V
Input Low Voltage (VDDI = VDDQ)
Input High Voltage (VDDI = VDDQ)
Input Leakage Current (0 V
≤
Vin
≤
VDD)
Output Leakage Current (0 V
≤
Vin
≤
VDDQ)
Output Low Voltage (IOL = 1 mA)
Output High Voltage (IOL = – 1 mA)
– 0.5
—
0.35 x VDDI
VDDI + 0.5
±
1
V
0.65 x VDDI
—
—
V
—
μ
A
—
—
±
1
μ
A
– 0.5
—
0.4
V
VDDQ – 0.4
—
VDDQ + 0.5
V
VIH
20% tKHKH
VSS
VSS – 0.5 V
Figure 3. Undershoot Voltage
VSS – 0.25 V
SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Notes
AC Supply Current (Device Selected, All Outputs Open,
Freq = Max, VDD = Max)
IDDA – 250
IDDA – 225
IDDA – 200
—
TBD
mA
1, 2,
3, 4
Input and I/O Supply Current – Desktop (All 40 Outputs Toggling,
Freq = Max, VDDI = Max, VDDQ = Max, VDDI = VDDQ, Cdt = 24 pF)
IDDQ – 250
IDDQ – 225
IDDQ – 200
—
311
280
249
mA
2, 5
Static Standby Supply Current (Device Deselected, Freq = Max,
VDD = Max, ADS
≥
(VDDI – 0.2 V), W Static
≤
(VSS + 0.2 V)
or
≥
(VDDI – 0.2 V), SA and DQx Inputs Static
≤
(VSS + 0.2 V),
Outputs Disabled)
ISB1 – 250
ISB1 – 225
ISB1 – 200
—
63
57
50
mA
1, 2, 4
Idle Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, ADS
≥
(VDDI – 0.2 V), W Static
≤
(VSS + 0.2 V)
or
≥
(VDDI – 0.2 V), SA and DQx Inputs Static
≤
(VSS + 0.2 V),
Outputs Disabled)
ISB2A
—
TBD
mA
1, 3, 4
Idle Input Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, ADS
≥
(VDDI – 0.2 V), W Static
≤
(VSS + 0.2 V)
or
≥
(VDDI – 0.2 V), SA and DQx Inputs Static
≤
(VSS + 0.2 V),
Outputs Disabled)
ISB2B
—
TBD
mA
1, 3, 5
NOTES:
1. Device is selected and deselected as defined by the Truth Table.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. Includes supply current for VDD only.
5. Includes supply currents for VDDI and VDDQ only.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCM63P531 | 32K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P531TQ7 | Replaced by PTH12000W : |
| MCM63P531TQ8 | 32K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P531TQ9 | 32K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P631 | 64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCM63P736TQ100R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ133 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ133R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ66R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。