參數(shù)資料
型號： MCM64PC32SG66
廠商： MOTOROLA INC
元件分類： SRAM
英文描述： 256K/512K Pipelined BurstRAM Secondary Cache Module for Pentium
中文描述： 32K X 64 CACHE TAG SRAM MODULE, 8 ns, DMA160
封裝： CARD EDGE MODULE-160
文件頁數(shù)： 6/12頁
文件大?。?/td> 190K
代理商： MCM64PC32SG66
MCM64AF32
6
MOTOROLA FAST SRAM
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Max
Unit
Input Capacitance
(TWE, CALE, CWE0 – CWE7)
(A5 – A17)
(CAA3, CAA4, CAB3, CAB4)
(COE)
Cin
8
14
26
50
pF
Input/Output Capacitance
(DQ0 – DQ63)
(TIO0 – TIO7)
CI/O
8
10
pF
DATA RAMs AC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 3.3 V
±
5%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
Input Timing Measurement Reference Level
Input Pulse Levels
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Rise/Fall Time
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 V
. . . . . . . . . . . . . . .
0 to 3.0 V
3 ns
Output Timing Measurement Reference Level
Output Load
. . . . . . . . . . . . . . . .
1.5 V
. . . . . . . . . . . . .
Figure 1A Unless Otherwise Noted
DATA RAMs READ CYCLE
(See Note 1)
–15
Parameter
Symbol
Min
Max
Unit
Notes
Read Cycle Time
tAVAV
tAVQV
tLAVQV
tAVCALL
tCALAX
tELQV
tGLQV
tAXQX
tELQX
tEHQZ
tGLQX
tGHQZ
tELICCH
tEHICCL
15
—
ns
2
Address Access Time (CAAx, CABx)
—
15
ns
Latched Address Access Time (A5 – A17)
—
22
ns
Latched Address to CALE Low Setup Time
4
—
ns
Latched Address to CALE Low Hold Time
3
—
ns
Enable Access Time
—
15
ns
3
Output Enable Access Time
—
8
ns
Output Hold from Address Change
4
—
ns
6
Enable Low to Output Active
4
—
ns
4, 5, 6
Enable High to Output High–Z
0
8
ns
4, 5, 6
Output Enable Low to Output Active
0
—
ns
4, 5, 6
Output Enable High to Output High–Z
0
7
ns
4, 5, 6
Power Up Time
0
—
ns
Power Down Time
NOTES:
1. CWE is high for read cycle.
2. All timings are referenced from the last valid address to the first address transition.
3. Addresses valid prior to or coincident with CS going low.
4. At any given voltage and temperature, tGHQZ (max) is less than tGLQX (min), both for a
given device and from device to device.
5. Transition is measured
±
500 mV from steady–state voltage with load of Figure 1B.
6. This parameter is sampled and not 100% tested.
7. Device is continuously selected (COE = VIL).
—
15
ns
AC TEST LOADS
OUTPUT
Z0 = 50
50
VL = 1.5 V
Figure 1A
Figure 1B
5 pF
+ 3.3 V
OUTPUT
353
319
TIMING LIMITS
The table of timing values shows either a
minimum or a maximum limit for each param-
eter. Input requirements are specified from
the external system point of view. Thus, ad-
dress setup time is shown as a minimum
since the system must supply at least that
much time (even though most devices do not
require it). On the other hand, responses from
the memory are specified from the device
point of view. Thus, the access time is shown
as a maximum since the device never pro-
vides data later than that time.
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