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參數(shù)資料
| 型號(hào)： | MCM6709RJ7 |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 64K x 4 Bit Static RAM |
| 中文描述： | 64K X 4 STANDARD SRAM, 7 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-28 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | MCM6709RJ7 |
MCM6709R
2
MOTOROLA FAST SRAM
TRUTH TABLE
(X = Don’t Care)
E
G
W
Mode
Output
Cycle
H
X
X
Not Selected
High–Z
—
L
H
H
Read
High–Z
—
L
L
H
Read
Dout
Din
Read Cycle
L
X
L
Write
Write Cycle
ABSOLUTE MAXIMUM RATINGS
(See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
Vin, Vout
– 0.5 to + 7.0
V
Voltage Relative to VSS for Any Pin
Except VCC
– 0.5 to VCC + 0.5
V
Output Current (per I/O)
Iout
PD
Tbias
TA
Tstg
±
30
mA
Power Dissipation
2.0
W
Temperature Under Bias
– 10 to + 85
°
C
Operating Temperature
0 to + 70
°
C
Storage Temperature — Plastic
– 55 to + 125
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
VIH
VIL
4.5
5.0
5.5
V
Input High Voltage
2.2
—
VCC + 0.3*
0.8
V
Input Low Voltage
*VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width
≤
2.0 ns) or I
≤
30.0 mA.
**VIL (min) = – 0.5 V dc @ 30.0 mA; VIL (min) = – 2.0 V ac (pulse width
≤
2.0 ns) or I
≤
30.0 mA.
– 0.5**
—
V
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E = VIH, Vout = 0 to VCC)
Output High Voltage (IOH = – 4.0 mA)
Output Low Voltage (IOL = 8.0 mA)
Ilkg(I)
Ilkg(O)
VOH
VOL
—
±
1.0
±
1.0
μ
A
μ
A
—
2.4
—
V
—
0.4
V
POWER SUPPLY CURRENTS
Parameter
Symbol
MCM6709R–6
MCM6709R–7
MCM6709R–8
Unit
Notes
AC Active Supply Current (Iout = 0 mA,
VCC = max, f = fmax)
ICCA
195
190
185
mA
1, 2, 3
AC Standby Current (E = VIH, VCC = max, f = fmax)
CMOS Standby Current (VCC = max, f = 0 MHz,
E
≥
VCC – 0.2 V, Vin
≤
VSS, or
≥
VCC – 0.2 V)
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3 V, VIH = 3 V).
2. All addresses transition simultaneously low (LSB) and then high (MSB).
3. Data states are all zero.
ISB1
ISB2
85
80
75
mA
1, 2, 3
20
20
20
mA
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid appli-
cation of any voltage higher than maximum
rated voltages to this high–impedance circuit.
This BiCMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
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