參數(shù)資料
型號: MCM67H618AFN12
廠商: MOTOROLA INC
元件分類: SRAM
英文描述: LJT 8C 8#16 SKT WALL RECP
中文描述: 64K X 18 CACHE SRAM, PQCC52
封裝: PLASTIC, LCC-52
文件頁數(shù): 1/12頁
文件大小: 208K
代理商: MCM67H618AFN12
MCM67H618A
1
Motorola, Inc. 1994
Product Preview
64K x 18 Bit BurstRAM
Synchronous Fast Static RAM
With Burst Counter and Self–Timed Write
The MCM67H618A is a 1,179,648 bit synchronous fast static random access
memory designed to provide a burstable, high–performance, secondary cache
for the i486
and Pentium
microprocessors. It is organized as 65,536 words
of 18 bits, fabricated with Motorola’s high–performance silicon–gate BiCMOS
technology. The device integrates input registers, a 2–bit counter, high speed
SRAM, and high drive capability outputs onto a single monolithic circuit for
reduced parts count implementation of cache data RAM applications. Syn-
chronous design allows precise cycle control with the use of an external clock
(K). BiCMOS circuitry reduces the overall power consumption of the integrated
functions for greater reliability.
Addresses (A0 – A15), data inputs (D0 – D17), and all control signals except
output enable (G) are clock (K) controlled through positive–edge–triggered
noninverting registers.
Bursts can be initiated with either address status processor (ADSP) or address
status cache controller (ADSC) input pins. Subsequent burst addresses can be
generated internally by the MCM67H618A (burst sequence imitates that of the
i486 and Pentium) and controlled by the burst address advance (ADV) input pin.
The following pages provide more detailed information on burst controls.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased flexibility for incoming signals.
Dual write enables (LW and UW) are provided to allow individually writeable
bytes. LW controls DQ0 – DQ8 (the lower bits), while UW controls DQ9 – DQ17
(the upper bits).
This device is ideally suited for systems that require wide data bus widths and
cache memory. See Figure 2 for applications information.
Single 5 V
±
5% Power Supply
Fast Access Times: 9/10/12 ns Max
Byte Writeable via Dual Write Enables
Internal Input Registers (Address, Data, Control)
Internally Self–Timed Write Cycle
ADSP, ADSC, and ADV Burst Control Pins
Asynchronous Output Enable Controlled Three–State Outputs
Common Data Inputs and Data Outputs
3.3 V I/O Compatible
High Board Density 52–Lead PLCC Package
ADSP Disabled with Chip Enable (E) – Supports Address Pipelining
BurstRAM is a trademark of Motorola, Inc.
i486 and Pentium are trademarks of Intel Corp.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
PIN ASSIGNMENT
10
11
9
8
DQ9
DQ10
VCC
VSS
DQ5
DQ8
DQ7
12
13
15
16
14
17
18
20
19
37
36
38
34
35
42
41
43
39
40
45
44
46
21 22 23 24 25 26 27 28 29 30 31 32 33
7
6
5 4
3 2
1 52 51 50 49 4847
DQ6
DQ4
DQ3
DQ2
VSS
VCC
DQ1
DQ0
VCC
VSS
DQ11
DQ12
DQ13
DQ14
VSS
VCC
DQ15
DQ16
DQ17
A
A
E
U
K
A
A
A
L
G
A
A
A
A
A
A
A
A
A
V
A
A
V
A
A
A
Order this document
by MCM67H618A/D
SEMICONDUCTOR TECHNICAL DATA
MCM67H618A
FN PACKAGE
PLASTIC
CASE 778–02
All power supply and ground pins must be
connected for proper operation of the device.
PIN NAMES
A0 – A15
K
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ADV
. . . . . . . . . . . .
LW
. . . . . . . . . . . .
UW
. . . . . . . . . . . .
ADSC
Controller Address Status
. . . . . . . . .
ADSP
Processor Address Status
. . . . . . . . .
E
. . . . . . . . . . . . . . . . . . . . . . . . .
G
. . . . . . . . . . . . . . . . . . . . . .
DQ0 – DQ17
. . . . . . . . . .
VCC
. . . . . . . . . . . . . . . .
VSS
. . . . . . . . . . . . . . . . . . . . . . . . . .
Address Inputs
. . . . . . . . . . . . . . . .
Clock
Burst Address Advance
Lower Byte Write Enable
Upper Byte Write Enable
Chip Enable
Output Enable
Data Input/Output
+ 5 V Power Supply
Ground
REV 1
5/95
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