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參數(shù)資料
| 型號： | MCP1402 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | Tiny 500 mA, High-Speed Power MOSFET Driver |
| 中文描述： | 小500毫安，高速功率MOSFET驅動器 |
| 文件頁數(shù)： | 10/20頁 |
| 文件大小： | 187K |
| 代理商： | MCP1402 |
MCP1401/02
DS22052A-page 10
2007 Microchip Technology Inc.
4.0
APPLICATION INFORMATION
4.1
General Information
MOSFET drivers are high-speed, high current devices
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In high frequency switching power
supplies, the PWM controller may not have the drive
capability to directly drive the power MOSFET. A MOS-
FET driver like the MCP1401/02 family can be used to
provide additional source/sink current capability.
4.2
MOSFET Driver Timing
The ability of a MOSFET driver to transition from a fully
off state to a fully on state are characterized by the
drivers rise time (t
R
), fall time (t
F
), and propagation
delays (t
D1
and t
D2
). The MCP1401/02 family of drivers
can typically charge and discharge a 470 pF load
capacitance in 19 ns along with a typical matched
propagation delay of 35 ns.
Figure 4-1
and
Figure 4-2
show the test circuit and timing waveform used to verify
the MCP1401/02 timing.
FIGURE 4-1:
Waveform.
Inverting Driver Timing
FIGURE 4-2:
Waveform.
Non-Inverting Driver Timing
4.3
Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, approximately
550 mA are needed to charge a 470 pF load with 18V
in 15 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and low
ESR film capacitor is recommended to be placed in
parallel between the driver V
DD
and GND. A 1.0 μF low
ESR film capacitor and a 0.1 μF ceramic capacitor
placed between pins 2 and 1 should be used. These
capacitors should be placed close to the driver to
minimized circuit board parasitics and provide a local
source for the required current.
4.4
PCB Layout Considerations
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation and
robustness of design. PCB trace loop area and
inductance should be minimized by the use of ground
planes or trace under MOSFET gate drive signals,
separate analog and power grounds, and local driver
decoupling.
Placing a ground plane beneath the MCP1401/02 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
0.1 μF
Ceramic
+5V
10%
90%
10%
90%
10%
90%
18V
1 μF
0V
0V
MCP1401
C
L
= 470 pF
Input
Input
Output
t
D1
t
F
t
D2
Output
t
R
V
DD
= 18V
90%
Input
t
D1
t
F
t
D2
Output
t
R
10%
10%
10%
+5V
18V
0V
0V
90%
90%
0.1 μF
Ceramic
1 μF
MCP1402
C
L
= 470 pF
Input
Output
V
DD
= 18V
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相關代理商/技術參數(shù) |
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|---|---|
| MCP1402T-E/MC | 功能描述:功率驅動器IC 05A Sngl MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MCP1402T-E/OT | 功能描述:功率驅動器IC 0.5A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MCP1403 | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:4.5A Dual High-Speed Power MOSFET Drivers |
| MCP1403-E/MF | 功能描述:功率驅動器IC 4.5A Dual MOSFET Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MCP1403-E/P | 功能描述:功率驅動器IC 4.5A Dual MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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