參數(shù)資料
型號(hào): MCP1703
廠商: Microchip Technology Inc.
英文描述: 250 mA, 16V, Low Quiescent Current
中文描述: 250毫安,16V的低靜態(tài)電流
文件頁(yè)數(shù): 4/24頁(yè)
文件大?。?/td> 302K
代理商: MCP1703
MCP1703
DS22049A-page 4
2007 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
Dropout Voltage
Note 1
,
Note 5
V
DROPOUT
330
525
625
750
650
mV
mV
mV
mV
mV
I
L
= 250 mA, V
R
= 5.0V
I
L
= 250 mA, 3.3V
V
R
< 5.0V
I
L
= 250 mA, 2.8V
V
R
< 3.3V
I
L
= 250 mA, 2.5V
V
R
< 2.8V
V
R
< 2.5V, See Maximum Output
Current Parameter
V
IN
= 0V to 6V, V
OUT
= 90% V
R
,
R
L
= 50
Ω
resistive
I
L
= 50 mA, f = 1 kHz, C
OUT
= 1 μF
f = 100 Hz, C
OUT
= 1 μF, I
L
= 100 μA,
V
INAC
= 100 mV pk-pk, C
IN
= 0 μF,
V
R
= 1.2V
725
975
1100
Output Delay Time
T
DELAY
1000
μs
Output Noise
Power Supply Ripple
Rejection Ratio
e
N
8
μV/(Hz)
1/2
dB
PSRR
44
Thermal Shutdown Protection
The minimum V
IN
must meet two conditions: V
IN
2.7V and V
IN
(V
OUT(MAX)
+ V
DROPOUT(MAX)
).
2:
V
R
is the nominal regulator output voltage. For example: V
R
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage V
IN
= V
OUT(MAX)
+ V
6
IN
= 2.7V (whichever is greater); I
OUT
= 100 μA.
3:
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
/ (V
R
*
Δ
Temperature), V
OUT-HIGH
= highest voltage measured over the temper-
ature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
4:
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT(MAX)
+ V
DROPOUT(MAX)
or 2.7V, whichever is greater.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7:
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
T
SD
150
°C
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise specified, all limits are established for V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
,
Note 1
,
I
LOAD
= 100 μA, C
OUT
= 1 μF (X7R), C
IN
= 1 μF (X7R), T
A
= +25°C.
Boldface
type applies for junction temperatures, T
J
(Note 7)
of -40°C to +125°C.
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Note
1:
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
T
A
T
A
T
A
-40
-40
-65
+125
+125
+150
°C
°C
°C
Thermal Package Resistance
Thermal Resistance, 3LD-SOT-223
θ
JA
θ
JC
θ
JA
θ
JC
θ
JA
θ
JC
62
15
336
110
75
10
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
0.100 sq in copper on both sides of 2
sided board, with vias
Thermal Resistance, 3LD-SOT-23A
°C/W
Thermal Resistance, 3LD-SOT-89
°C/W
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
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