參數(shù)資料
型號(hào): MCP1802
廠商: Microchip Technology Inc.
英文描述: 300 mA, High PSRR, Low Quiescent Current LDO
中文描述: 300毫安,高PSRR,低靜態(tài)電流低壓降穩(wěn)壓器
文件頁數(shù): 14/24頁
文件大小: 292K
代理商: MCP1802
MCP1802
DS22053A-page 14
2007 Microchip Technology Inc.
6.0
APPLICATION CIRCUITS &
ISSUES
6.1
Typical Application
The MCP1802 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
FIGURE 6-1:
Typical Application Circuit.
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1802 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(25.0 μA x V
IN
). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The maximum continuous operating temperature
specified for the MCP1802 is +85
°
C
.
To estimate the
internal junction temperature of the MCP1802, the total
internal power dissipation is multiplied by the thermal
resistance from junction to ambient (R
θ
JA
). The thermal
resistance from junction to ambient for the SOT-23-5
package is estimated at 256
°
C/W.
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
EQUATION 6-5:
Package Type =
Input Voltage Range =
V
IN
maximum =
V
OUT
typical =
SOT-23-5
2.4V to 5.0V
5.0V
1.8V
50 mA maximum
I
OUT
=
MCP1802
GND
V
OUT
V
IN
C
IN
1 μF
Ceramic
C
OUT
1 μF Ceramic
V
OUT
1.8V
V
IN
2.4V to 5.0V
I
OUT
50 mA
SHDN
NC
P
LDO
V
IN MAX
)
)
V
OUT MIN
)
(
)
I
OUT MAX
)
)
×
=
Where:
P
LDO
=
LDO Pass device internal power
dissipation
Maximum input voltage
LDO minimum output voltage
V
IN(MAX)
V
OUT(MIN)
=
=
T
J MAX
)
P
TOTAL
R
θ
JA
×
T
AMAX
+
=
Where:
T
J(MAX)
=
Maximum continuous junction
temperature
Total device power dissipation
Thermal resistance from
junction to ambient
Maximum ambient temperature
P
TOTAL
R
θ
JA
=
=
T
AMAX
=
P
D MAX
)
T
------------------------–
T
R
θ
JA
)
(
)
=
Where:
P
D(MAX)
=
Maximum device power
dissipation
Maximum continuous junction
temperature
Maximum ambient temperature
Thermal resistance from
junction to ambient
T
J(MAX)
=
T
A(MAX)
R
θ
JA
=
=
T
J RISE
)
P
D MAX
)
R
θ
JA
×
=
Where:
T
J(RISE)
=
Rise in device junction
temperature over the ambient
temperature
Maximum device power
dissipation
Thermal resistance from
junction to ambient
P
TOTAL
=
R
θ
JA
=
T
J
T
J RISE
)
T
A
+
=
Where:
T
J
=
=
Junction Temperature
Rise in device junction
temperature over the ambient
temperature
Ambient temperature
T
J(RISE)
T
A
=
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