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參數資料
型號： MCP4132-104E/P
廠商： Microchip Technology
文件頁數： 23/59頁
文件大?。?/td> 0K
描述： IC RHEO DGTL SNGL 100K SPI 8DIP
標準包裝： 60
接片： 129
電阻（歐姆）： 100k
電路數： 1
溫度系數： 標準值 150 ppm/°C
存儲器類型： 易失
接口： 4 線 SPI（芯片選擇）
電源電壓： 1.8 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 通孔
封裝/外殼： 8-DIP（0.300"，7.62mm）
供應商設備封裝： 8-PDIP
包裝： 管件
產品目錄頁面： 675 (CN2011-ZH PDF)
2008 Microchip Technology Inc.
DS22060B-page 3
MCP413X/415X/423X/425X
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
Voltage on VDD with respect to VSS ............... -0.6V to +7.0V
Voltage on CS, SCK, SDI, SDI/SDO, and
SHDN with respect to VSS ...................................... -0.6V to 12.5V
Voltage on all other pins (PxA, PxW, PxB, and
SDO) with respect to VSS ............................ -0.3V to VDD + 0.3V
Input clamp current, IIK
(VI < 0, VI > VDD, VI > VPP ON HV pins) ......................±20 mA
Output clamp current, IOK
(VO < 0 or VO > VDD) ..................................................±20 mA
Maximum output current sunk by any Output pin
......................................................................................25 mA
Maximum output current sourced by any Output pin
......................................................................................25 mA
Maximum current out of VSS pin .................................100 mA
Maximum current into VDD pin ....................................100 mA
Maximum current into PXA, PXW & PXB pins ............±2.5 mA
Storage temperature ....................................-65°C to +150°C
Ambient temperature with power applied
.....................................................................-40°C to +125°C
Total power dissipation (Note 1) ................................400 mW
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins
.................................. ≥ 4 kV (HBM),
..........................................................................
≥ 300V (MM)
Maximum Junction Temperature (TJ) ......................... +150°C
Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Note 1: Power dissipation is calculated as follows:
Pdis = VDD x {IDD -
∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)
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