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參數(shù)資料
型號: MCP4252-502E/UN
廠商: Microchip Technology
文件頁數(shù): 39/59頁
文件大?。?/td> 0K
描述: IC POT DGTL 5K 257TAPS 10-MSOP
標準包裝: 100
接片: 257
電阻(歐姆): 5k
電路數(shù): 2
溫度系數(shù): 標準值 150 ppm/°C
存儲器類型: 易失
接口: 4 線 SPI(芯片選擇)
電源電壓: 1.8 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 10-TFSOP,10-MSOP(0.118",3.00mm 寬)
供應商設(shè)備封裝: 10-MSOP
包裝: 管件
產(chǎn)品目錄頁面: 676 (CN2011-ZH PDF)
其它名稱: MCP4252-502-E/UN
MCP4252-502-E/UN-ND
Micrel, Inc.
KSZ8051MNL/RNL
July 2010
44
M9999-070910-1.0
Absolute Maximum Ratings
(1)
Supply Voltage
(VDD_1.2) ................................................... -0.5V to +1.8V
(VDDIO, VDDA_3.3) ........................................ -0.5V to +4.0V
Input Voltage (all inputs) ............................... -0.5V to +4.0V
Output Voltage (all outputs) .......................... -0.5V to +4.0V
Lead Temperature (soldering, 10sec.)....................... 260°C
Storage Temperature (Ts) ..........................-55°C to +150°C
Operating Ratings
(2)
Supply Voltage
(VDDIO_3.3, VDDA_3.3) .......................... +3.135V to +3.465V
(VDDIO_2.5)........................................ +2.375V to +2.625V
(VDDIO_1.8)........................................ +1.710V to +1.890V
Ambient Temperature
(TA , Commercial)...................................... 0°C to +70°C
(TA , Industrial) .......................................-40°C to +85°C
Maximum Junction Temperature (TJ Max) ................. 125°C
Thermal Resistance (
θJA) .........................................34°C/W
Thermal Resistance (
θJC)...........................................6°C/W
Electrical Characteristics
(3)
Symbol
Parameter
Condition
Min
Typ
Max
Units
Supply Current (VDDIO,VDDA_3.3 = 3.3V)
(4)
IDD1
10Base-T
Full-duplex traffic @ 100% utilization
39.5
mA
IDD2
100Base-TX
Full-duplex traffic @ 100% utilization
48.9
mA
IDD3
Power Saving Mode
Ethernet cable disconnected (reg. 1F.10 = 1)
30.0
mA
IDD4
Power Down Mode
Software power down (reg. 0.11 = 1)
2.0
mA
CMOS Level Inputs
VDDIO = 3.3V
2.0
V
VDDIO = 2.5V
1.8
V
VIH
Input High Voltage
VDDIO = 1.8V
1.3
V
VDDIO = 3.3V
0.8
V
VDDIO = 2.5V
0.7
V
VIL
Input Low Voltage
VDDIO = 1.8V
0.5
V
IIN
Input Current
VIN = GND ~ VDDIO
-10
10
A
CMOS Level Outputs
VDDIO = 3.3V
2.4
V
VDDIO = 2.5V
2.0
V
VOH
Output High Voltage
VDDIO = 1.8V
1.5
V
VDDIO = 3.3V
0.4
V
VDDIO = 2.5V
0.4
V
VOL
Output Low Voltage
VDDIO = 1.8V
0.3
V
|Ioz|
Output Tri-State Leakage
10
A
LED Outputs
ILED
Output Drive Current
Each LED pin (LED0, LED1)
8
mA
Strapping Pins
VDDIO = 3.3V
29
43
76
K
VDDIO = 2.5V
37
59
102
K
pu
Internal Pull-up Resistance
VDDIO = 1.8V
57
100
187
K
VDDIO = 3.3V
27
43
76
K
VDDIO = 2.5V
35
60
110
K
pd
Internal Pull-down Resistance
VDDIO = 1.8V
55
100
190
K
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