參數(shù)資料
型號(hào)： MCP455
廠商： Microchip Technology Inc.
英文描述： 400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
中文描述： 13.56 MHz讀/寫無源RFID器件
文件頁數(shù)： 7/50頁
文件大小： 1172K
代理商： MCP455
2003 Microchip Technology Inc.
DS40232H-page 7
MCRF450/451/452/455
TABLE 2-4:
PAD COORDINATES (MICRONS)
TABLE 2-5:
DIE MECHANICAL DIMENSIONS
TABLE 2-6:
WAFER MECHANICAL SPECIFICATIONS
Pad Name
Lower
Upper
Passivation Openings
Pad
Center X
Pad
Center Y
Left X
Left Y
Right X
Right Y
Pad Width
Pad Height
Ant. Pad A
-853.50
-992.10
-764.50
-903.10
89.00
89.00
-809.00
-947.60
Ant. Pad B
759.50
-993.70
848.50
-904.70
89.00
89.00
804.00
-949.20
V
SS
769.10
977.90
858.10
1066.90
89.00
89.00
813.60
1022.40
V
DD
-839.50
45.50
-750.50
134.50
89.00
89.00
-795.00
90.00
CLK
721.10
77.80
810.10
166.80
89.00
89.00
765.60
122.30
F
CLK
-821.50
910.70
-732.50
999.70
89.00
89.00
-777.00
955.20
Note 1:
All coordinates are referenced from the center of the die.
Specifications
Min
Typ
Max
Unit
Comments
Bond pad opening
—
—
3.5 x 3.5
89 x 89
—
—
mil
μ
m
Note 1
,
Note 2
Die backgrind thickness
7.5
190.5
8
203.2
8.5
215.9
mil
μ
m
Sawed 8” wafer on frame
(option = WF)
(Note 3)
10
254
11
279.4
12
304.8
mil
μ
m
Bumped, sawed 8” wafer
on frame (option = WFB)
Unsawed wafer (option = W)
Unsawed 8” bumped
wafer (option = WB),
(Note 3)
Die passivation thickness (multilayer)
—
1.3
—
μ
m
Note 4
Die Size:
Die size X*Y before saw (step size)
Die size X*Y after saw
—
—
1904 x 2340.8
1840.5 x 2277.3
—
—
μ
m
μ
m
—
—
Note 1:
The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at
least 0.1 mil.
2:
Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu.
3:
As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as
thick as the application will allow.
4:
The Die Passivation Thickness (1.3
μ
m) can vary by device depending on the mask set used. The
passivation is formed by:
-
Layer 1: Oxide (undoped oxide)
-
Layer 2: PSG (doped oxide)
-
Layer 3: Oxynitride (top layer)
5:
The conversion rate is 25.4
μ
m/mil.
Notice:
Extreme care is urged in the handling and assembly of die products since they are susceptible to
mechanical and electrostatic damage.
Specifications
Min
Typ
Max
Unit
Comments
Wafer Diameter
—
8
—
inch
Die separation line width
—
80
—
μ
m
Dice per wafer
—
6,600
—
die
Batch size
—
24
—
wafer
相關(guān)PDF資料
PDF描述
MCP455P 13.56 MHz Read/Write Passive RFID Device
MCP455S 13.56 MHz Read/Write Passive RFID Device
MCP455SB 400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
MCP455SN 400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
MCP455W 13.56 MHz Read/Write Passive RFID Device
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