參數(shù)資料
型號(hào): MCP4562T-103E/MF
廠商: Microchip Technology
文件頁數(shù): 35/92頁
文件大?。?/td> 0K
描述: IC DGTL POT 10K 256TAPS 8-DFN
標(biāo)準(zhǔn)包裝: 1
接片: 257
電阻(歐姆): 10k
電路數(shù): 1
溫度系數(shù): 標(biāo)準(zhǔn)值 150 ppm/°C
存儲(chǔ)器類型: 非易失
接口: I²C(設(shè)備位址)
電源電壓: 2.7 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-VDFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 8-DFN-EP(3x3)
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁面: 677 (CN2011-ZH PDF)
其它名稱: MCP4562T-103E/MFDKR
MCP454X/456X/464X/466X
DS22107A-page 40
2008 Microchip Technology Inc.
bit 0
WP: EEPROM Write Protect Status bit (Refer to Section “EEPROM Write Protect” for further infor-
mation)
This bit indicates the status of the write protection on the EEPROM memory. When Write Protect is
enabled, writes to all non-volatile memory are prevented. This includes the General Purpose EEPROM
memory, and the non-volatile Wiper registers. Write Protect does not block modification of the volatile
wiper register values or the volatile TCON register value (via Increment, Decrement, or Write
commands).
This status bit is an OR of the devices Write Protect pin (WP) and the internal non-volatile WP bit. High
Voltage commands are required to enable and disable the internal WP EEPROM bit.
1
=
EEPROM memory is Write Protected
0
=
EEPROM memory can be written
REGISTER 4-1:
STATUS REGISTER (ADDRESS = 0x05) (CONTINUED)
Note 1:
Requires a High Voltage command to modify the state of this bit (for Non-Volatile devices only). This bit is
Not directly written, but reflects the system state (for this feature).
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