The MCP4XXX’s I2
參數(shù)資料
型號(hào)： MCP4562T-503E/MS
廠商： Microchip Technology
文件頁數(shù)： 51/92頁
文件大小： 0K
描述： IC POT DGTL 50K SGL 8-MSOP
標(biāo)準(zhǔn)包裝： 2,500
接片： 257
電阻（歐姆）： 50k
電路數(shù)： 1
溫度系數(shù)： 標(biāo)準(zhǔn)值 150 ppm/°C
存儲(chǔ)器類型： 非易失
接口： I²C（設(shè)備位址）
電源電壓： 2.7 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 8-TSSOP，8-MSOP（0.118"，3.00mm 寬）
供應(yīng)商設(shè)備封裝： 8-MSOP
包裝： 帶卷 (TR)
2008 Microchip Technology Inc.
DS22107A-page 55
MCP454X/456X/464X/466X
7.0
DEVICE COMMANDS
The MCP4XXX’s I2C command formats are specified in
this section. The I2C protocol does not specify how
commands are formatted.
The MCP4XXX supports four basic commands.
Depending on the location accessed determines the
commands that are supported.
For the Volatile Wiper Registers, these commands are:
Write Data
Read Data
Increment Data
Decrement Data
For the Non-Volatile wiper EEPROM, general purpose
data EEPROM, and the TCON Register these com-
mands are:
Write Data
Read Data
These commands have formats for both a single
command or continuous commands. These commands
are shown in Table 7-1.
Each command has two operational states. The
operational state determines if the device commands
control the special features (Write Protect and Wiper-
Lock Technology). These operational states are
referred to as:
Normal Serial Commands
High-Voltage Serial Commands
TABLE 7-1:
I2C COMMANDS
Normal serial commands are those where the HVC pin
is driven to VIH or VIL. With High-Voltage Serial Com-
mands, the HVC pin is driven to VIHH. In each mode,
there are four possible commands.
Additionally, there are two commands used to enable
or disable the special features (Write Protect and Wiper
Lock Technology) of the device. The commands are
special cases of the Increment and Decrement
High-Voltage Serial Command.
Table 7-2 shows the supported commands for each
memory location.
Table 7-3 shows an overview of all the device com-
mands and their interaction with other device features.
7.1
Command Byte
The MCP4XXX’s Command Byte has three fields: the
Address, the Command Operation, and 2 Data bits,
see Figure 7-1. Currently only one of the data bits is
defined (D8).
The device memory is accessed when the Master
sends a proper Command Byte to select the desired
operation. The memory location getting accessed is
contained in the Command Byte’s AD3:AD0 bits. The
action desired is contained in the Command Byte’s
C1:C0 bits, see Table 7-1. C1:C0 determines if the
desired
memory
location
will
be
read,
written,
Incremented (wiper setting +1) or Decremented (wiper
setting -1). The Increment and Decrement commands
are only valid on the volatile wiper registers, and in
High Voltage commands to enable/disable WiperLock
Technology and Software Write Protect.
If the Address bits and Command bits are not a valid
combination, then the MCP4XXX will generate a Not
Acknowledge pulse to indicate the invalid combination.
The I2C Master device must then force a Start Condi-
tion to reset the MCP4XXX’s 2C module.
D9 and D8 are the most significant bits for the digital
potentiometer’s wiper setting. The 8-bit devices utilize
D8 as their MSb while the 7-bit devices utilize D7 (from
the data byte) as it’s MSb.
FIGURE 7-1:
Command Byte Format.
Command
# of Bit
Clocks (1)
Operates on
Volatile/
Non-Volatile
memory
Operation
Mode
Write Data
Single
29
Both
Continuous
18n + 11
Volatile Only
Read Data
Single
29
Both
Random
48
Both
Continuous
18n + 11
Both (2)
Increment
(3)
Single
20
Volatile Only
Continuous
9n + 11
Volatile Only
Decrement
(3)
Single
20
Volatile Only
Continuous
9n + 11
Volatile Only
Note 1:
“n” indicates the number of times the
command operation is to be repeated.
2:
This command is useful to determine if a
non-volatile memory write cycle has
completed.
3:
High Voltage Increment and Decrement
commands on select non-volatile memory
locations enable/disable WiperLock
Technology and the software Write
Protect feature.
AA
D
3
A
D
2
A
D
1
A
D
0
C
1
C
0
D
9
D
8
A
MCP4XXX
COMMAND BYTE
00
= Write Data
01
= Increment
MSbits (Data)
10
= Decrement
11
= Read Data
Command Operation bits
Memory Address
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