參數(shù)資料
型號(hào): MCP6021-E/SN
廠商: Microchip Technology
文件頁數(shù): 34/42頁
文件大?。?/td> 0K
描述: IC OPAMP SNGL 2.5V 10MHZ 8SOIC
標(biāo)準(zhǔn)包裝: 100
放大器類型: 通用
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 7 V/µs
增益帶寬積: 10MHz
電流 - 輸入偏壓: 1pA
電壓 - 輸入偏移: 500µV
電流 - 電源: 1mA
電流 - 輸出 / 通道: 30mA
電壓 - 電源,單路/雙路(±): 2.5 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 管件
產(chǎn)品目錄頁面: 678 (CN2011-ZH PDF)
MCP6021/1R/2/3/4
DS21685D-page 4
2009 Microchip Technology Inc.
AC ELECTRICAL CHARACTERISTICS
MCP6023 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, RL =10kΩ to VDD/2 and CL = 60 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Power Supply
Supply Voltage
VDD
2.5
5.5
V
Quiescent Current per Amplifier
IQ
0.5
1.0
1.35
mA
IO = 0
AC Response
Gain Bandwidth Product
GBWP
10
MHz
Phase Margin
PM
65
°
G = +1 V/V
Settling Time, 0.2%
tSETTLE
250
ns
G = +1 V/V, VOUT = 100 mVp-p
Slew Rate
SR
7.0
V/s
Total Harmonic Distortion Plus Noise
f = 1 kHz, G = +1 V/V
THD+N
0.00053
%
VOUT = 0.25V to 3.25V (1.75V ± 1.50VPK),
VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +1 V/V, RL = 600Ω
THD+N
0.00064
%
VOUT = 0.25V to 3.25V (1.75V ± 1.50VPK),
VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +1 V/V
THD+N
0.0014
%
VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +10 V/V
THD+N
0.0009
%
VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
f = 1 kHz, G = +100 V/V
THD+N
0.005
%
VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz
Noise
Input Noise Voltage
Eni
2.9
Vp-p
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—8.7
nV/
√Hz f = 10 kHz
Input Noise Current Density
ini
—3
fA/
√Hz f = 1 kHz
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, RL =10kΩ to VDD/2 and CL = 60 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
VIL
VSS
—0.2 VDD
V
CS Input Current, Low
ICSL
-1.0
0.01
A
CS = VSS
CS High Specifications
CS Logic Threshold, High
VIH
0.8 VDD
—VDD
V
CS Input Current, High
ICSH
0.01
2.0
A
CS = VDD
GND Current
ISS
-2
-0.05
A
CS = VDD
Amplifier Output Leakage
IO(LEAK)
—0.01—
A
CS = VDD
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
tON
2
10
s
G = +1, VIN = VSS,
CS = 0.2VDD to VOUT = 0.45VDD time
CS High to Amplifier Output High-Z Time
tOFF
0.01
s
G = +1, VIN = VSS,
CS = 0.8VDD to VOUT = 0.05VDD time
Hysteresis
VHYST
—0.6
V
VDD = 5.0V, Internal Switch
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