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2003 Microchip Technology Inc.
DS21685B-page 3
MCP6021/2/3/4
AC CHARACTERISTICS
MCP6023 CHIP SELECT (CS) CHARACTERISTICS
Output
Maximum Output Voltage Swing
V
OL
, V
OH
I
SC
V
SS
+15
—
—
V
DD
-20
—
mV
0.5V output overdrive
Output Short Circuit Current
±30
mA
Power Supply
Supply Voltage
V
S
I
Q
2.5
—
5.5
V
Quiescent Current per Amplifier
0.5
1.0
1.35
mA
I
O
= 0
Electrical Specifications:
Unless otherwise indicated, T
A
= 25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
10
—
MHz
Phase Margin at Unity-Gain
PM
—
65
—
°
G = 1
Settling Time, 0.2%
t
SETTLE
SR
—
250
—
ns
G = 1, V
OUT
= 100 mV
p-p
Slew Rate
—
7.0
—
V/μs
Total Harmonic Distortion Plus Noise
f = 1 kHz, G = 1
f = 1 kHz, G = 1, R
L
= 600
@1 KHz
f = 1 kHz, G = +1 V/V
THD+N
—
0.00053
—
%
V
OUT
= 0.25V + 3.25V, BW = 22 kHz
V
OUT
= 0.25V + 3.25V, BW = 22 kHz
V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
THD+N
—
0.00064
—
%
THD+N
—
0.0014
—
%
f = 1 kHz, G = +10 V/V
THD+N
—
0.0009
—
%
f = 1 kHz, G = +100 V/V
THD+N
—
0.005
—
%
Noise
Input Voltage Noise
E
ni
e
ni
i
ni
—
2.9
—
μVp-p
nV/
√
Hz
fA/
√
Hz
f = 0.1 Hz to 10 Hz
Input Voltage Noise Density
—
8.7
—
f = 10 kHz
Input Current Noise Density
—
3
—
f = 1 kHz
Electrical Specifications:
Unless otherwise indicated, T
A
= 25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
DC Characteristics
CS Logic Threshold, Low
CS Input Current, Low
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage
Timing
CS Low to Amplifier Output
Turn-on Time
CS High to Amplifier Output
High-Z Turn-off Time
Hysteresis
V
IL
I
CSL
V
IH
I
CSH
I
SS
—
0
—
0.2V
DD
—
V
-1.0
0.01
μA
CS = V
SS
0.8V
DD
—
—
V
DD
2.0
V
0.01
μA
CS = V
DD
CS = V
DD
CS = V
DD
—
0.05
2.0
μA
—
0.01
—
μA
t
ON
—
2
10
μs
G = 1, V
IN
= V
SS
,
CS = 0.2V
DD
to V
OUT
= 0.45V
DD
time
t
OFF
—
0.01
—
μs
G = 1, V
IN
= V
SS
,
CS = 0.8V
DD
to V
OUT
= 0.05V
DD
time
V
HYST
—
0.6
—
V
Internal Switch
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2 and R
L
= 10 k
to V
DD
/2.
Parameters
Sym
Min
Typ
Max
Units
Conditions