參數(shù)資料
型號(hào): MCP6031T-E/MS
廠商: Microchip Technology
文件頁(yè)數(shù): 29/34頁(yè)
文件大?。?/td> 0K
描述: IC OPAMP SNGL 1.8V 8MSOP
標(biāo)準(zhǔn)包裝: 2,500
放大器類型: 通用
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 0.004 V/µs
增益帶寬積: 10kHz
電流 - 輸入偏壓: 1pA
電壓 - 輸入偏移: 150µV
電流 - 電源: 0.9µA
電流 - 輸出 / 通道: 23mA
電壓 - 電源,單路/雙路(±): 1.8 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-TSSOP,8-MSOP(0.118",3.00mm 寬)
供應(yīng)商設(shè)備封裝: 8-MSOP
包裝: 帶卷 (TR)
配用: MCP6031DM-PTPLS-ND - BOARD DEMO MCP6031 PHOTODIODE
其它名稱: MCP6031T-E/MSTR
MCP6031/2/3/4
DS22041B-page 4
2008 Microchip Technology Inc.
MCP6033 CHIP SELECT ELECTRICAL CHARACTERISTICS
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP6033.
Electrical Specifications: Unless otherwise indicated, V
DD = +1.8V to +5.5V, VSS =GND, TA = +25°C, VCM =VDD/2,
VOUT =VDD/2, VL = VDD/2, CL = 60 pF, RL = 1 MΩ to VL and CS is tied low (Refer to Figure 1-1).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
VIL
VSS
—0.2VDD
V
CS Input Current, Low
ICSL
—-10
pA
CS = VSS
CS High Specifications
CS Logic Threshold, High
VIH
0.8VDD
VDD
V
CS Input Current, High
ICSH
—10
pA
CS = VDD
GND Current
ISS
-400
pA
CS = VDD
Amplifier Output Leakage
IO(LEAK)
—10
pA
CS = VDD
CS Dynamic Specifications
CS Low to Amplifier Output
Turn-on Time
tON
4
100
ms
CS
≤ 0.2V
DD to VOUT = 0.9VDD/2,
G = +1 V/V, VIN = VDD/2,
RL = 50 kΩ to VL = VSS.
CS High to Amplifier Output
High-Z
tOFF
—10
s
CS
≥ 0.8V
DD to VOUT = 0.1VDD/2,
G = +1 V/V, VIN = VDD/2,
RL = 50 kΩ to VL = VSS.
CS Hysteresis
VHYST
—0.3VDD
—V
VIL
High-Z
tON
VIH
CS
tOFF
VOUT
-400 pA
High-Z
ISS
ICS
10 pA
-400 pA
-0.9 A
(typical)
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