參數(shù)資料
型號： MCP6409T-H/SL
廠商： Microchip Technology
文件頁數(shù)： 23/44頁
文件大?。?/td> 0K
描述： IC OPAMP QUAD 1.8V 1MHZ 14SOIC
標準包裝： 2,600
放大器類型： 通用
電路數(shù)： 4
輸出類型： 滿擺幅
轉換速率： 0.5 V/µs
增益帶寬積： 1MHz
電流 - 輸入偏壓： 1pA
電壓 - 輸入偏移： 4500µV
電流 - 電源： 45µA
電流 - 輸出 / 通道： 15mA
電壓 - 電源，單路/雙路(±)： 1.8 V ~ 6 V
工作溫度： -40°C ~ 150°C
安裝類型： 表面貼裝
封裝/外殼： 14-SOIC（0.154"，3.90mm 寬）
供應商設備封裝： 14-SOICN
包裝： 帶卷 (TR)
2009-2011 Microchip Technology Inc.
DS22229D-page 3
MCP6401/1R/1U/2/4/6/7/9
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings
VDD – VSS ........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (VIN+, VIN-) .......... VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD – VSS|
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (TJ).......................... +155°C
ESD Protection on All Pins (HBM; MM; CDM)
....≥ 4 kV; 300V,
1500V
Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rat-
ing conditions for extended periods may affect device
reliability.
1.2
MCP6401/1R/1U/2/4 Electrical Specifications
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A = +25°C, VDD = +1.8v to +6.0v, VSS =GND,
VCM =VDD/2, VOUT ≈ VDD/2, VL =VDDD/2 and RL = 100 kΩ to VL (Refer to Figure 1-1).
Parameters
Sym
Min
Typ
Max
Units
Temp
Parts
Conditions
Input Offset
Input Offset Voltage
VOS
-4.5
±0.8
+4.5
mV
E, H
VCM = VSS
—
±1.0
—
mV
+125°C
E
—
±1.5
—
mV
+150°C
H
Input Offset Drift with
Temperature
ΔV
OS/ΔTA
—
±2.0
—
V/°C
-40°C
to
+125°C
EVCM = VSS
—
±2.5
—
V/°C
-40°C
to
+150°C
H
Power Supply
Rejection Ratio
PSRR
63
78
—
dB
E, H
VCM = VSS
—
75
—
dB
+125°C
E
—
73
—
dB
+150°C
H
Input Bias Current and Impedance
Input Bias Current
IB
—
1
100
pA
E, H
—30
—
pA
+85°C
E, H
—
800
—
pA
+125°C
E
—
7
—
nA
+150°C
H
Input Offset Current
IOS
—1
—
pA
E, H
—5
—
pA
+85°C
E, H
—
20
—
pA
+125°C
E
—
45
—
pA
+150°C
H
Note 1:
E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
2:
Figure 2-14 shows how VCMR changes across temperature.
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