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參數(shù)資料
| 型號： | MCR106-6 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers |
| 中文描述： | 4 A, 400 V, SCR, TO-225AA |
| 封裝： | CASE 077-09, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | MCR106-6 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Reverse Blocking Triode Thyristors
PNPN devices designed for high volume consumer applications such as
temperature, light and speed control; process and remote control, and warning
systems where reliability of operation is important.
Glass-Passivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 110
°
C, RGK = 1 k
)
MCR106-2
MCR106-3
MCR106-4
MCR106-6
MCR106-8
VDRM
and
VRRM
60
100
200
400
600
Volts
RMS Forward Current
(All Conduction Angles)
IT(RMS)
4
Amps
Average Forward Current
TC = 93
°
TA = 30
°
C
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = –40 to +110
°
C)
IT(AV)
2.55
Amps
ITSM
25
Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
2.6
A2s
Peak Gate Power
PGM
PG(AV)
IGM
VRGM
TJ
0.5
Watt
Average Gate Power
0.1
Watt
Peak Forward Gate Current
0.2
Amp
Peak Reverse Gate Voltage
6
Volts
Operating Junction Temperature Range
–40 to +110
°
C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage;
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
(cont.)
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MCR106/D
SEMICONDUCTOR TECHNICAL DATA
SCRs
4 AMPERES RMS
60 thru 600 VOLTS
CASE 77-08
(TO-225AA)
STYLE 2
K
G
A
G
AK
A
*Motorola preferred devices
except MCR106–3
相關PDF資料 |
PDF描述 |
|---|---|
| MCR106-8 | Sensitive Gate Silicon Controlled Rectifiers |
| MCR106-6 | Silicon Controlled Rectifiers |
| MCR106-8 | Silicon Controlled Rectifiers |
| MCR106-2 | Silicon Controlled Rectifiers |
| MCR106-3 | Silicon Controlled Rectifiers |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MCR106-6G | 功能描述:SCR 400V 4A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR106-8 | 制造商:ON Semiconductor 功能描述:THYRISTOR 4A 600V TO-126 |
| MCR106-8G | 功能描述:SCR 600V 4A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR106G-6-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:REVERSE BLOCKING TRIODE THYRISTORS |
| MCR106G-8-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:REVERSE BLOCKING TRIODE THYRISTORS |
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