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參數(shù)資料
| 型號： | MCR12 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Silicon Controlled Rectifiers( 可控硅整流器) |
| 中文描述： | 硅（可控硅整流器控制整流器） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 55K |
| 代理商： | MCR12 |
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 4
1
Publication Order Number:
MCR12/D
MCR12D, MCR12M, MCR12N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
halfwave silicon gatecontrolled devices are needed.
Features
Blocking Voltage to 800 Volts
OnState Current Rating of 12 Amperes RMS at 80
°
C
High Surge Current Capability 100 Amperes
Rugged, Economical TO220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT an IH Specified for
Ease of Design
High Immunity to dv/dt 100 V/ sec Minimum at 125
°
C
PbFree Packages are Available*
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Peak Repetitive OffState Voltage
(Note 1
)
(T
J
= 40 to 125
°
C, Sine Wave,
50 to 60 Hz,
Gate Open)
Symbol
Value
Unit
MCR12D
MCR12M
MCR12N
V
DRM,
V
RRM
400
600
800
V
On-State RMS Current
(180
°
Conduction Angles; T
C
= 80
°
C)
I
T(RMS)
12
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 125
°
C)
I
TSM
100
A
Circuit Fusing Consideration (t = 8.33 ms)
I
2
t
41
A
2
sec
Forward Peak Gate Power
(Pulse Width
≤
1.0 s, T
C
= 80
°
C)
P
GM
5.0
W
Forward Average Gate Power
(t = 8.3 ms, T
C
= 80
°
C)
P
G(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width
≤
1.0 s, T
C
= 80
°
C)
I
GM
2.0
A
Operating Junction Temperature Range
T
J
40 to +125
°
C
Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
and V
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
T
stg
40 to +150
°
C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
TO220AB
CASE 221A09
STYLE 3
1
http://onsemi.com
MARKING
DIAGRAM
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= PbFree Package
= Diode Polarity
23
Device
Package
Shipping
ORDERING INFORMATION
MCR12D
TO220AB
50 Units / Rail
MCR12N
TO220AB
50 Units / Rail
MCR12DG
TO220AB
(PbFree)
50 Units / Rail
MCR12NG
TO220AB
(PbFree)
50 Units / Rail
Preferred
devices are recommended choices for future use
and best overall value.
MCR12M
TO220AB
50 Units / Rail
MCR12MG
TO220AB
(PbFree)
50 Units / Rail
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
AY WW
MCR12xG
AKA
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| MCR264-4 | Silicon Controlled Rectifier Reverse Blocking Thyristor(40A，400V硅控整流器反向截止晶閘管) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MCR1206-1300F | 制造商:RCD Components Inc 功能描述:CR1206-1300F |
| MCR1206-241J | 制造商:RCD Components Inc 功能描述:CR1206-241F |
| MCR-12A | 制造商:Cooper Bussmann 功能描述: |
| MCR12D | 功能描述:SCR 400V 12A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR12DCM | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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