- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385575 > MCR310-10 (ON SEMICONDUCTOR) Silicon Controlled Rectifiers( 可控硅整流器) PDF資料下載
參數(shù)資料
| 型號(hào)： | MCR310-10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifiers( 可控硅整流器) |
| 中文描述： | 10 A, 800 V, SCR, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 50K |
| 代理商： | MCR310-10 |
MCR310 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C, R
GK
= 1 k
Ω
unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward Blocking Current
(1)
(T
J
= 110
°
C, V
D
= Rated V
DRM
)
T
C
= 110
°
C
T
C
= 25
°
C
I
DRM
—
—
—
—
500
10
A
A
Peak Reverse Blocking Current
(1)
(T
J
= 110
°
C, V
R
= Rated V
RRM
)
T
C
= 110
°
C
T
C
= 25
°
C
I
RRM
—
—
—
—
500
10
A
A
On-State Voltage
(I
TM
= 20 A Peak, Pulse Width
1 ms, Duty Cycle
2%)
V
TM
—
1.7
2.2
Volts
Gate Trigger Current, Continuous dc
(2)
(V
D
= 12 V, R
L
= 100
Ω
)
I
GT
—
30
200
A
Gate Trigger Voltage, Continuous dc
(V
D
= 12 V, R
L
= 100
Ω
)
(V
D
= Rated V
DRM
, R
L
= 10 k
Ω
, T
J
= 110
°
C)
V
GT
—
0.1
0.5
—
1.5
—
Volts
Holding Current
(V
D
= 12 V, I
TM
= 100 mA)
I
H
—
—
6
mA
Critical Rate of Rise of Forward Blocking Voltage
(V
D
= Rated V
DRM
, T
J
= 110
°
C, Exponential Waveform)
dv/dt
—
10
—
V/ s
Gate Controlled Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 20 A, I
G
= 2 mA)
t
gt
—
1
—
s
1. Ratings apply for negative gate voltage or R
GK
= 1 k
Ω
. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the
voltage applied exceeds the rated blocking voltage.
2. Does not include R
GK
current.
Figure 1. Average Current Derating
Figure 2. On-State Power Dissipation
Figure 3. Normalized Gate Current
Figure 4. Gate Voltage
0.3
120
0.5
1
2
40
20
0
20
40
60
80
90
100
3
140
V
D
= 12 Vdc
8
T
J
, JUNCTION TEMPERATURE (
°
C)
0
2
4
110
6
70
80
90
100
10
120
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
α
= 30
°
180
°
dc
α
= CONDUCTION ANGLE
0.6
α
0.1
0.2
0.3
0.4
0.5
40
0.7
60
40
20
0
100
20
60
80
120
V
D
= 12 Vdc
0
2
4
6
8
16
T
J
, JUNCTION TEMPERATURE (
°
C)
0
4
8
12
20
α
α
= CONDUCTION ANGLE
10
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
90
°
180
°
dc
T
C
°
N
P
A
V
G
60
°
α
= 30
°
60
°
90
°
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCR60-98D-2.54DSA | ISA Bus (AT bus) |
| MCR60A-98D-2.54DSA | ISA Bus (AT bus) |
| MCR60-98D-2.54DSB | ISA Bus (AT bus) |
| MCR60A-98D-2.54DSB | ISA Bus (AT bus) |
| MCR60A-98D-2.54DS | ISA Bus (AT bus) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR310-10G | 功能描述:SCR 800V 10A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR3103 | 制造商:ONS 功能描述:ON SEMICONDUCTOR S7D9B |
| MCR310-3 | 制造商:ONS 功能描述:ON SEMICONDUCTOR S7D9B |
| MCR310-6 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors |
| MCR310-6G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。