參數(shù)資料
型號： MCT5211-X007
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 6 PIN
中文描述： Transistor Output Optocouplers Phototransistor Out Single CTR > 110%
文件頁數(shù)： 2/10頁
文件大?。?/td> 163K
代理商： MCT5211-X007
www.vishay.com
2
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83657
Rev. 1.6, 23-Feb-11
MCT5211
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low
Input Current, with Base Connection
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Peak reverse voltage
Forward continuos current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown
voltage
Emitter collector breakdown
voltage
Collector base breakdown
voltage
Power dissipation
Derate linearly from 25 °C
COUPLER
Isolation test voltage
Total package dissipation (LED and detector)
Derate linearly from 25 °C
Creepage distance
Clearance distance
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
TEST CONDITION
SYMBOL
VALUE
UNIT
V
R
I
F
P
diss
6
V
40
75
1
mA
mW
mW/°C
BV
CEO
30
V
BV
ECO
7
V
BV
CBO
70
V
P
diss
200
2.6
mW
mW/°C
V
ISO
P
tot
5300
260
3.5
7
7
V
RMS
mW
mW/°C
mm
mm
CTI
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
amb
T
stg
10
12
10
11
°C
°C
Operating temperature
Storage temperature
- 55 to + 100
- 55 to + 150
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= 5 mA
Reverse voltage
I
R
= 10 μA
OUTPUT
DC forward current gain
V
CE
= 5 V, I
C
= 100 μA
Collector emitter breakdown
voltage
Emitter collector breakdown
voltage
Collector base breakdown
voltage
Collector emitter leakage
voltage
COUPLER
Saturation voltage
I
F
= 1.6 mA, I
C
= 1.6 mA
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
V
R
1.2
1.5
V
V
6
h
FE
100
200
I
C
= 100 μA
BV
CEO
30
V
I
E
= 100 μA
BV
ECO
7
V
I
E
= 10 μA
BV
CBO
70
V
V
CE
= 10 V
I
CEO
5
100
nA
MCT5211
V
CEsat
0.25
0.4
V
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相關代理商/技術參數(shù)
參數(shù)描述
MCT5211-X007T 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 110% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
MCT5211-X009 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 110% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
MCT5211-X009T 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 110% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
MCT5211-X017T 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 110% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
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