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參數(shù)資料
| 型號(hào)： | MCZ145011DW |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | Photoelectric Smoke Detector IC with I/O For Line-Powered Applications |
| 中文描述： | 光電感煙探測(cè)器芯片與I /線(xiàn)路O型供電應(yīng)用 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 253K |
| 代理商： | MCZ145011DW |
Sensors
4
Freescale Semiconductor
MC145011
Table 3. AC Electrical Characteristics
(Reference Timing Diagram
Figure 6
and
Figure 7
) (T
A
= 25
°
C, V
DD
= 9.0 V, Component Values from
Figure 8
: R1 = 100.0 K
,
C3 = 1500.0 pF, R2 = 10.0 M
)
No.
Characteristic
Symbol
Test Condition
Min
Max
Unit
1
Oscillator Period
(1)
1. Oscillator period T (= T
R
+ T
F
) is determined by the external components R1, R2, and C3 where T
R
= (0.6931) R2 C3 and
T
F
= (0.6931) R1 C3. The other timing characteristics are some multiple of the oscillator timing as shown in the table.
1/f
OSC
Free-Running Sawtooth
Measured at Pin 12
9.5
11.5
ms
2
LED Status
t
LED
No Local Smoke, and
No Remote Smoke
Illuminated
3
Remote Smoke, but
No Local Smoke
Illuminated
4
Local Smoke or Push
button Test
Extinguished
5
STROBE Pulse Width
t
W(STB)
t
IRED
9.5
11.5
ms
6
IRED Pulse Period
Smoke Test
9.67
11.83
s
7
Chamber Sensitivity Test,
without Local Smoke
38.9
47.1
8
Push button Test
0.302
0.370
9
IRED Pulse Width
t
w(IRED)
94
116
μ
s
10
IRED Rise Time
t
R
—
30
μ
s
IRED Fall Time
t
F
—
200
11
SILVER and BRASS Modulation Period
t
MOD
Local or Remote Smoke
297
363
ms
11, 12
SILVER and BRASS Duty Cycle
t
ON
/t
MOD
Local or Remote Smoke
73
77
%
13
SILVER and BRASS Chirp Pulse Period
t
CH
Low Supply or Degraded
Chamber Sensitivity
38.9
47.1
s
14
SILVER and BRASS Chirp Pulse Width
t
W(CH)
Low Supply or Degraded
Chamber Sensitivity
9.5
11.5
ms
15
Rising Edge on I/O to Smoke Alarm Response Time
t
RR
Remote Smoke,
No Local Smoke
—
800
ms
16
Strobe Pulse Period
t
STB
Smoke Test
9.67
11.83
s
17
Chamber Sensitivity Test,
without Local Smoke
38.9
47.1
18
Low Supply Test,
without Local Smoke
38.9
47.1
19
Push button Test
0.302
0.370
Table 4. Pin Description
Pin No.
Pin Name
Description
1
C1
A capacitor connected to this pin as shown in
Figure 8.
determines the gain of the on-chip photo amplifier during push
button test and chamber sensitivity test (high gain). The capacitor value is chosen such that the alarm is tripped from
background reflections in the chamber during push button test.
A
v
≈
1 + (C1/10) where C1 is in pF. CAUTION: The value of the closed-loop gain should not exceed 10,000.
A capacitor connected to this pin as shown in
Figure 8.
determines the gain of the on-chip photo amplifier except during
push button or chamber sensitivity tests.
A
v
≈
1 + (C2/10) where C2 is in pF. This gain increases about 10% during the IRED pulse, after two consecutive local
smoke detections.
Resistor R14 must be installed in series with C2. R14
≈
[1/(12
√
C2)] - 680 where R14 is in ohms and C2 is in farads.
2
C2
3
DETECT
This input to the high-gain pulse amplifier is tied to the cathode of an external photodiode. The photodiode should have
low capacitance and low dark leakage current. The diode must be shunted by a load resistor and is operated at zero
bias.
The Detect input must be ac/dc decoupled from all other signals, VDD, and VSS. Lead length and/or foil traces to this
pin must be minimized, also. See
Figure 9.
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