參數(shù)資料
型號(hào): MCZ33198EF
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: Automotive High-Side TMOS Driver
中文描述: 汽車(chē)高邊的TMOS驅(qū)動(dòng)器
文件頁(yè)數(shù): 7/17頁(yè)
文件大?。?/td> 203K
代理商: MCZ33198EF
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
33198
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions
7.0 V
V
SUP
18 V, - 40
°
C
T
A
125
°
C, GND = 0 V
unless otherwise noted. Typical
values noted reflect the approximate parameter means at
T
A
= 25°
C under nominal conditions unless otherwise noted.
TIMING DIAGRAMS
Figure 4. Timing Measurements Test Schematic
Parameter
Vcc = 7.0V
Vcc = 14V
Vcc = 21V
Unit
TYPICAL RISE TIME (T
R
) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO
Figure 4
)
C = 1.0nF
15
7.0
10
μ
s
C = 3.0nF
60
25
40
μ
s
C = 10nF
140
80
90
μ
s
C = 30nF
730
270
340
μ
s
TYPICAL FALL TIME (T
F
) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO
Figure 4
)
C = 1.0nF
150
230
280
μ
s
C = 3.0nF
430
800
950
μ
s
C = 10nF
1200
2300
2750
μ
s
C = 30nF
4800
8000
9200
μ
s
10%
90%
C
5
1
4
2
3
8
6
7
Vcc
INPUT
GATE
SRC
DRN
VCC
STATUS
TIMER
GND
0V
5V
INPUT Pin 7
GATE Pin 4
+ 15V)
tR
tF
Typically (VCC
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