參數(shù)資料
型號(hào): MCZ33290EF
廠商: Freescale Semiconductor
文件頁數(shù): 10/12頁
文件大?。?/td> 0K
描述: IC SER LNK INTER ISO KLINE 8SOIC
標(biāo)準(zhǔn)包裝: 98
應(yīng)用: 自動(dòng)
接口: 串行
電源電壓: 8 V ~ 18 V
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 管件
安裝類型: 表面貼裝
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
33290
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
ARCHIVE
INFORMATION
ARCHIVE
INFORMATION
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions of 4.75 V
≤ V
DD ≤ 5.25 V, 8.0 V ≤ VBB ≤ 18 V, -40°C ≤ TC ≤ 125°C, unless otherwise
noted.
Characteristic
Symbol
Min
Typ
Max
Unit
Fall Time (19)
RISO = 510 Ω to VBB, CISO = 10 nF to Ground
tfall(ISO)
2.0
s
ISO Propagation Delay (20)
High to Low: RISO = 510 Ω, CISO = 500 pF
Low to High: RISO = 510 Ω, CISO = 500 pF
tPD(ISO)
2.0
s
Notes
19.
Time required ISO voltage to transition from 0.8 VBB to 0.2 VBB.
20.
Changes in the value of CISO affect the rise and fall time but have minimal effect on Propagation Delay.
21.
Step TX voltage from 0.2 VDD to 0.8 VDD. Time measured from VIH(ISO) until VISO reaches 0.3 VBB.
22.
Step TX voltage from 0.8 VDD to 0.2 VDD. Time measured from VIL(ISO) until VISO reaches 0.7 VBB.
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