參數(shù)資料
型號： MCZ33390EF
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： Class B Serial Transceiver
中文描述： B級串行收發(fā)器
文件頁數(shù)： 5/15頁
文件大小： 216K
代理商： MCZ33390EF
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
33390
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 7.0 V
≤
V
BAT
≤
16 V, -40
°
C
≤
T
A
≤
125
°
C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with V
BAT
= 13 V, T
A
= 25°C. All positive currents are
into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER CONSUMPTION
Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave)
BUS Load = 1380
to GND, 3.6 nF to GND
BUS Load = 257
to GND, 20.2 nF to GND
I
BAT (OP1)
I
BAT (OP2)
–
–
3.0
22.4
11.5
32
mA
Battery Bus Low Input Current
After
SLEEP
Toggle Low to High; Prior to Tx Toggling
After Tx Toggle High to Low
I
BAT(BUS L1)
I
BAT(BUS L2)
–
–
1.1
6.4
3.0
8.5
mA
Sleep State Battery Current
V
SLEEP
= 0 V
I
BAT(SLEEP)
–
38.2
65
μA
BUS
BUS Input Receiver Threshold
(6)
Threshold High (Bus Increasing until Rx
≥
3.0 V)
Threshold Low (Bus Decreasing until Rx
≤
3.0 V)
Threshold in Sleep State (
SLEEP
= 0 V)
Hysteresis (V
BUS(IH)
- V
BUS(IL)
,
SLEEP
= 0 V)
V
BUS(IH)
V
BUS(IL)
BUS
TH(SLEEP)
V
BUS(HYST)
4.25
–
2.4
0.1
3.9
3.7
3.0
0.2
–
3.5
3.4
0.6
V
BUS
-Out Voltage (257
≤
R
BUS(L)
to GND
≤
1380
)
8.2 V
≤
V
BAT
≤
16 V, Tx = 5.0 V
4.25 V
≤
V
BAT
≤
8.2 V, Tx = 5.0 V
Tx = 0 V
V
BUS (OUT1)
V
BUS (OUT2)
V
BUS (OUT3)
6.25
V
BAT
- 1.6
–
6.9
–
0.27
8.0
V
BAT
0.7
V
BUS Short Circuit Output Current
Tx = 5.0 V, -2.0 V
≤
V
BUS
≤
4.8 V
I
BUS (SHORT)
60
129
170
mA
BUS Leakage Current
-2.0 V
≤
V
BUS
≤
0 V
0 V
≤
V
BUS
≤
V
BAT
I
BUS (LEAK1)
I
BUS (LEAK2)
-500
–
-55
189
–
500
μA
BUS Thermal Shutdown
(7)
(Tx = 5.0 V, I
BUS
= -0.1 mA)
Increase Temperature until V
BUS
≤
2.5 V
T
BUS (LIM)
150
170
190
°C
BUS Thermal Shutdown Hysteresis
(8)
T
BUS (LIM)
- T
BUS (REEN)
T
BUS (LI MHYS)
10
12
15
°C
BUS and LOAD Current with Loss of V
BAT
or GND (I
BAT
= 0 μA) (see
Figure 4
)
-18 V
≤
V
BUS
≤
9.0 V
-18 V
≤
V
LOAD
≤
9.0 V
I
BUS (LOSS)
I
LOAD (LOSS)
–
–
0.00
0.00
0.1
0.1
mA
Notes
6.
7.
8.
Typical threshold value is the approximate actual occurring switch point value with V
BAT
= 13 V, T
A
= 25°C.
Device characterized but not production tested for thermal shutdown.
Device characterized but not production tested for thermal shutdown hysteresis.
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