STATIC ELECTRICAL CHARACTERISTICS LIN PIN (VO" />
參數(shù)資料
型號: MCZ33399EF
廠商: Freescale Semiconductor
文件頁數(shù): 16/19頁
文件大?。?/td> 0K
描述: IC LIN INTERFACE W/WAKE 8-SOIC
標(biāo)準(zhǔn)包裝: 98
控制器類型: 本地互聯(lián)網(wǎng)絡(luò)(LIN)
接口: LIN
電源電壓: 7 V ~ 18 V
電流 - 電源: 3mA
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 管件
Analog Integrated Circuit Device Data
6
Freescale Semiconductor
33399
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
LIN PIN (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE)
Low Level Bus Voltage (Dominant State)
TXD LOW, VLIN = 40 mA
VDOM
0.0
1.4
V
High Level Voltage (Recessive State)
TXD HIGH, IOUT = 1.0 A
VREC
0.85 VSUP
V
Internal Pullup Resistor to VSUP (4)
-40 °C
TA 70 °C
70 °C < TA 125 °C
RPU
20
35
30
49
47
60
k
Current Limitation
TXD LOW, VLIN = VSUP
ILIM
50
150
200
mA
Leakage Current to GND
Recessive State, VSUP - 0.3 V VLIN VSUP
VSUP Disconnected, -18 V VLIN 18 V (Excluding Internal Pull-up
Source)
VSUP Disconnected, VLIN = -18 V (Including Internal Pull-up Source)
VSUP Disconnected, VLIN = +18 V (Including Internal Pull-up Source)
ILEAK
0.0
-40
-600
15
10
40
A
LIN Receiver, Low Level Input Voltage
TXD HIGH, RXD LOW
VLINL
0 VSUP
0.4 VSUP
V
LIN Receiver, High Level Input Voltage
TXD HIGH, RXD HIGH
VLINH
0.6 VSUP
VSUP
V
LIN Receiver Threshold Center
(VLINH - VLINL) / 2
VLINTH
VSUP/2
V
LIN Receiver Input Voltage Hysteresis
VLINH - VLINL
VLINHYS
0.05 VSUP
0.15 VSUP
V
LIN Wake-up Threshold Voltage
VLINWU
3.5
4.5
6.0
V
INH OUTPUT PIN
High Level Voltage (Normal Mode)
VWUH
VSUP -0.8
VSUP
V
Leakage Current (Sleep Mode)
0 < VINH < VSUP
ILEAK
0.0
5.0
A
WAKE INPUT PIN
Typical Wake-Up Threshold (EN = 0 V, 7.0 V
VSUP 18 V) (5)
HIGH-to-LOW Transition
LOW-to-HIGH Transition
VWUTH
0.3 VSUP
0.4 VSUP
0.43 VSUP
0.55 VSUP
0.65 VSUP
V
Wake-up Threshold Hysteresis
VWUHYS
0.1 VSUP
0.16 VSUP
0.2 VSUP
V
WAKE Input Current
VWAKE 14 V
VWAKE > 14 V
IWU
1.0
5.0
100
A
Notes
4.
A diode structure is inserted with the pullup resistor to avoid parasitic current path from LIN to VSUP.
5.
When VSUP is greater than 18 V, the wake-up voltage thresholds remain identical to the wake-up thresholds at 18 V.
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V
VSUP 18 V, -40C TA 125C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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