參數(shù)資料
型號(hào): MCZ33689DEWR2
廠(chǎng)商: Freescale Semiconductor
文件頁(yè)數(shù): 4/31頁(yè)
文件大?。?/td> 0K
描述: IC SYSTEM BASIS CHIP LIN 32-SOIC
標(biāo)準(zhǔn)包裝: 1,000
應(yīng)用: 自動(dòng)
電流 - 電源: 5mA
電源電壓: 5.5 V ~ 18 V
工作溫度: -40°C ~ 125°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 32-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 32-SOIC
包裝: 帶卷 (TR)
Analog Integrated Circuit Device Data
12
Freescale Semiconductor
33689
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions 5.5 V
≤ V
SUP ≤ 18 V, - 40°C ≤ T
A ≤ 125°C, GND = 0.0 V unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
SPI INTERFACE CHARACTERISTICS
SPI Operation Frequency
fSPI
0.25
4.0
MHz
SCLK Clock Period
tPSCLK
250
N/A
ns
SCLK Clock High Time
tWSCLKH
125
N/A
ns
SCLK Clock Low Time
tWSCLKL
125
N/A
ns
Falling Edge of CS to Rising Edge of SCLK
tLEAD
100
N/A
ns
Falling Edge of SCLK to CS Rising Edge
tLAG
100
N/A
ns
MOSI to Falling Edge of SCLK (Data Setup Time)
tSI(SU)
40
N/A
ns
Falling Edge of SCLK to MOSI (Data Hold Time)
tSI(HOLD)
40
N/A
ns
MISO Rise Time (14)
CL = 220 pF
tRSO
25
50
ns
MISO Fall Time (14)
CL = 220 pF
tFSO
25
50
ns
Time from Falling or Rising Edge of CS to: (14)
MISO Low Impedance (Enable)
MISO High Impedance (Disable)
tSO(EN)
tSO(DIS)
0.0
50
ns
Time from Rising Edge of SCLK to MISO Data Valid (14)
0.2 VDD ≤ MISO ≥ 0.8 VDD, CL = 100 pF
tVALID
0.0
50
ns
RST
OUTPUT PIN IN NORMAL AND STOP MODES
Reset Duration After VDD HIGH
tDURRST
0.65
1.0
1.35
ms
WDC
PIN
Watchdog Period Accuracy Using an External Resistor (Excluding Resistor
Tolerances) (15)
ACCWDC
-15
15
%
Watchdog Time Period (15)
10 k
Ω External Resistor
100 k
Ω External Resistor
No External Resistor, WDC Open, Normal Mode
tWDC
107
10.558
99.748
160
215
ms
Notes
14.
Parameter guaranteed by design; however, it is not production tested.
15.
Watchdog time period calculation formula:
tWDC = 0.991 * R + 0.648 (R in kΩ and tWDC in ms).
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