參數(shù)資料
型號: MCZ33897BEFR2
廠商: Freescale Semiconductor
文件頁數(shù): 2/19頁
文件大?。?/td> 0K
描述: IC TXRX CAN SGL WIRE 8-SOIC
標(biāo)準(zhǔn)包裝: 2,500
類型: 收發(fā)器
驅(qū)動器/接收器數(shù): 1/1
規(guī)程: CAN
電源電壓: 12V
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 帶卷 (TR)
Analog Integrated Circuit Device Data
10
Freescale Semiconductor
33897
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
BUS (CONTINUED)
High Voltage Rising Output Delay
200
Ω ≤ R
L ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs
Measured from TXD=VIL to VBUS as follows:
Max Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V
Min Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V
Max Time to VBUSMOD = 9.4 V, 12.0 V ≤ VBATT ≤ 26.5 V
tDLYHVRO
2.0
6.3
18
μs
High Voltage Falling Output Delay
200
Ω ≤ R
L ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs,
12.0 V
≤ V
BATT ≤ 26.5 V
Measured from TXD=VIH to VBUS as follows:
Max Time to VBUSMOD = 1.0 V
Min Time to VBUSMOD = 3.7 V
tDLYHVFO
1.8
14
μs
RECEIVER RXD
Receive Delay Time (5.0 V
≤ V
BATT ≤ 26.5 V)
Awake
t RDLY
0.2
1.0
μs
Receive Delay Time (BUS Rising to RXD Falling, 5.0 V
≤ V
BATT ≤ 26.5 V)
Sleep
t RDLYSL
10
70
μs
CNTL
CNTL Falling Delay Time (5.0 V
≤ V
BATT ≤ 26.5 V)
tCNTLFDLY
300
1000
ms
Notes
12.
VBUSMOD is the voltage at the BUSMOD node in Figure 6, page 13.
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions of -40
°C ≤ T
A ≤ 125 °C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
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