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參數(shù)資料
| 型號： | MD2009DFX |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High voltage NPN Power transistor for standard Definition CRT display |
| 中文描述： | 高壓晶體管NPN電源標(biāo)準(zhǔn)清晰度陰極射線管顯示器 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 191K |
| 代理商： | MD2009DFX |
MD2009DFX
Electrical characteristics
3/10
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
CES
Collector cut-off
current (V
BE
= 0)
V
CE
= 1500V
V
CE
= 1500V, T
c
= 125°C
0.2
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5V
40
120
mA
V
(BR)EBO
Emitter-base
breakdown voltage
(I
C
= 0)
I
E
= 700mA
10
V
V
CE(sat)(1)
1.
Pulsed duration = 300 ms, duty cycle
≤
1.5%.
Collector-emitter
saturation voltage
I
C
= 5.5A , I
B
= 1.4A
2.8
V
V
BE(sat)(1)
Base-emitter
saturation voltage
I
C
= 5.5A , I
B
= 1.4A
1.3
V
h
FE(1)
DC current gain
I
C
= 1A, V
CE
= 5V
I
C
= 5.5A, V
CE
= 1V
I
C
= 5.5A , V
CE
= 5V
5
18
4.7
7
V
f
Diode forward voltage I
F
= 5.5 A
1.6
V
t
s
t
f
Inductive load
Storage time
Fall time
I
C
= 5A,
,,
f
h
= 16KHz
I
B(on)
= 1.5A,
,
V
BE(off)
= -2.7V
L
BB(off)
= 6.2
μ
H
4.5
0.3
6
0.6
μ
s
μ
s
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