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參數(shù)資料
| 型號(hào)： | MD2103DFX |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High voltage NPN power transistor for standard definition CRT display |
| 中文描述： | 高壓npn型為標(biāo)準(zhǔn)清晰度陰極射線管顯示器功率晶體管 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 170K |
| 代理商： | MD2103DFX |
Electrical characteristics
MD2103DFX
4/11
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Note (1) Pulsed duration = 300
μ
s, duty cycle
≤
1.5%
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
CES
Collector cut-off current
(V
BE
=0)
V
CE
= 1500V
V
CE
= 1500V T
C
= 125°C
0.2
2
mA
mA
I
EBO
Emitter cut-off current
(I
C
=0)
V
EB
= 5V
50
125
mA
V
(BR)EBO
Emitter-base brakdown
voltage (I
C
= 0)
I
E
= 700mA
11
V
V
CE(sat) (1)
Collector-emitter
saturation voltage
I
C
= 3A
_ _
I
B
=0.75A
1.8
V
V
BE(sat) (1)
Base-emitter saturation
voltage
I
C
= 3A
_ _
I
B
=0.75A
1.5
V
h
FE (1)
DC current gain
I
C
= 1A V
CE
=5V
I
C
= 3A V
CE
=1V
I
C
= 3A V
CE
=5V
6.5
17
6
9.5
t
s
t
f
Inductive load
Storage time
Fall time
I
C
=3A f
h
=16kHz
I
B(on)
=0.5A V
BE(off)
=-2.7V
L
BB(off)
=6.3
μ
H
(see
Figure 9
)
3.8
0.25
μ
s
μ
s
V
F
Diode forward voltage
I
F
= 3A
2
V
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|---|---|
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