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參數資料
| 型號： | MD51V64160 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 4M×16 Dynamic RAM(4M×16動態(tài)RAM) |
| 中文描述： | 4米× 16動態(tài)RAM（4米× 16動態(tài)內存） |
| 文件頁數： | 5/16頁 |
| 文件大?。?/td> | 455K |
| 代理商： | MD51V64160 |
Semiconductor
MD51V64160
5/16
DC Characteristics
Notes :
1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
Parameter
Symbol
Condition
MD51V64160
-60
MD51V64160
-50
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C)
I
OH
= –2.0 mA
I
OL
= 2.0 mA
0 V
￡
V
I
￡
V
CC
+ 0.3 V;
All other pins not
under test = 0 V
DQ disable
0 V
￡
V
O
￡
V
CC
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
RAS
,
CAS
cycling,
t
RC
= Min.
Average Power
Supply Current
(Operating)
RAS
,
CAS
= V
IH
RAS
,
CAS
≥
V
CC
–0.2 V
Power Supply
Current (Standby)
RAS
cycling,
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
CAS
= V
IL
,
DQ = enable
Average Power
Supply Current
(
RAS
-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(
CAS
before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
CAS
before
RAS
RAS
= V
IL
,
CAS
cycling,
t
PC
= Min.
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
90
1
0.5
90
5
120
70
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
100
1
0.5
100
5
140
80
Unit
V
V
m
A
m
A
mA
mA
mA
mA
mA
mA
Note
1, 2
1
1, 2
1
1, 2
1, 3
RAS
cycling,
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