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參數(shù)資料
| 型號： | MF1S5009DUD |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 電源管理 |
| 英文描述： | MF1S5009 Mainstream contactless smart card IC |
| 中文描述： | 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, UUC |
| 封裝： | DIE |
| 文件頁數(shù)： | 5/32頁 |
| 文件大?。?/td> | 266K |
| 代理商： | MF1S5009DUD |
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MF1S5009
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3 — 27 July 2010
189131
5 of 32
NXP Semiconductors
MF1S5009
Mainstream contactless smart card IC
[1]
The gap between chips may vary due to changing foil expansion.
[2]
Pads P1, TP2 and VSS are disconnected when wafer is sawn.
7.1 Fail die identification
Electronic wafer mapping covers the electrical test results and additionally the results of
mechanical/visual inspection.
No ink dots are applied.
gap between chips
[1]
typical = 15
μ
m
minimum = 5
μ
m
Passivation
type
material
thickness
Au bump (substrate connected to VSS)
material
hardness
shear strength
height
height uniformity
sandwich structure
nitride
1.75
μ
m
>
99.9 % pure Au
35 to 80 HV 0.005
>70 MPa
18
μ
m
within a die =
±
2
μ
m
within a wafer =
±
3
μ
m
wafer to wafer =
±
4
μ
m
minimum =
±
1.5
μ
m
LA, LB = 69
μ
m
×
69
μ
m
P1;TP2;VSS
[2]
= 58
μ
m
×
58
μ
m
±
5
μ
m
sputtered TiW
flatness
size
size variation
under bump metallization
Table 3.
Specifications
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| MF1S5009DUD,005 | 功能描述:RFID應(yīng)答器 MAINSTREAM CNTCTLESS SMART CARD RoHS:否 制造商:Murata 存儲容量:512 bit 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| MF1S5030DA3 | 制造商:NXP Semiconductors 功能描述:Cut Tape |
| MF1S5030DA3,118 | 功能描述:RFID應(yīng)答器 MIFARE CLASSIC 1K SMART CARD RoHS:否 制造商:Murata 存儲容量:512 bit 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| MF1S5030DA3118 | 制造商:NXP Semiconductors 功能描述:MIFARE CLASSIC 1K MOA2 |
| MF1S5030DA4,118 | 功能描述:RFID應(yīng)答器 MIFARE CLASSIC 1K SMART CARD RoHS:否 制造商:Murata 存儲容量:512 bit 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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