參數(shù)資料
型號(hào): MF1S5030DA3
廠商: NXP Semiconductors N.V.
元件分類: 外設(shè)及接口
英文描述: MIFARE Classic 1K - Mainstream contactless smart card IC for fast and easy solution development
封裝: MF1S5030DA3<SOT500|<<<1<Always Pb-free,;MF1S5030DA4<SOT500-2 (PLLMC)|<<http://www.nxp.com/packages/SOT500-2.html<1<Always Pb-free,;MF1S5030DA6<SOT500-3 (PLLMC)|&
文件頁數(shù): 23/37頁
文件大?。?/td> 425K
代理商: MF1S5030DA3
MF1S503x
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.1 — 21 February 2011
194031
23 of 37
NXP Semiconductors
MF1S503x
MIFARE Classic 1K - Mainstream contactless smart card IC
13. Wafer specification
For more details on the wafer delivery forms see
Ref. 6
.
Table 24.
Wafer
diameter
maximum diameter after foil expansion
thickness
flatness
Potential Good Dies per Wafer (PGDW)
Wafer backside
material
treatment
roughness
[1]
the gap between chips may vary due to changing foil expansion
Table 25.
Wafer
diameter
thickness
flatness
Potential Good Dies per Wafer (PGDW)
Wafer backside
material
treatment
roughness
Wafer specifications MF1S5035DUx/L
200 mm typical (8 inches)
210 mm
120
μ
m
±
15
μ
m
not applicable
27720
Si
ground and stress relieve
R
a
max = 0.5
μ
m
R
t
max = 5
μ
m
Chip dimensions
step size
x = 1062
μ
m
y = 1012
μ
m
typical = 27
μ
m
minimum = 5
μ
m
gap between chips
[1]
Passivation
type
material
thickness
sandwich structure
PSG / nitride
500 nm / 600 nm
Wafer specifications MF1S5037DUx
200 mm typical (8 inches)
120
μ
m
±
15
μ
m
not applicable
25060
Si
ground and stress relieve
R
a
max = 0.5
μ
m
R
t
max = 5
μ
m
Chip dimensions
step size
x = 1100
μ
m
y = 1030
μ
m
x = 86,4
μ
m
y = 66,4
μ
m
scribe line
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