參數(shù)資料
型號： MF35-800
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 參考電壓二極管
英文描述： Fast Recovery Diode
中文描述： 40 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
封裝： DO-5, 1 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 83K
代理商： MF35-800
MF35
2/8
SURGE RATINGS
Conditions
Max.
Units
400
A
800
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with V
RRM
≤
10V, T
j
= 125
o
C
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
o
C/W
-
0.2
Thermal resistance - case to heatsink
R
th(c-h)
Thermal resistance - junction to case
R
th(j-c)
Mounting torque 3.5Nm
with mounting compound
Symbol
Parameter
-
0.8
o
C/W
Min.
t
rr
5
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RM
Peak reverse current
Reverse recovery time
Q
R
Recovered charge
V
TO
Threshold voltage
r
T
Slope resistance
At T
vj
= 125
o
C
-
7.0
m
At T
vj
= 125
o
C
-
1.2
V
-
10
μ
C
-
200
ns
At V
RRM
, T
case
= 100
o
C
-
mA
At 120A peak, T
case
= 25
o
C
-
2.0
V
Conditions
Max.
CHARACTERISTICS
-
125
o
C
C
125
-55
Storage temperature range
T
stg
T
vj
Virtual junction temperature
Forward (conducting)
-
125
o
C
10ms half sine; T
j
= 125
o
C
Nm
3.8
3.2
Mounting torque
-
Reverse (blocking)
I
F
= 1A, di
RR/
dt = 25A/
μ
s, T
case
= 25C,
V
R
= 100V
I
F
= 50A, di
RR/
dt = 50A/
μ
s, T
case
= 25C,
V
R
= 100V
相關(guān)PDF資料
PDF描述
MF35-1200 Fast Recovery Diode
MF35 Fast Recovery Diode
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