參數(shù)資料
型號(hào): MG400Q1US65H
廠商: Toshiba Corporation
英文描述: High Power & High Speed Switching Applications
中文描述: 高功率
文件頁數(shù): 4/6頁
文件大小: 195K
代理商: MG400Q1US65H
MG400Q1US65H
2003-12-19
4
S
S
μ
s
Collector current I
C
(A)
Switching time – I
C
S
μ
s
Collector current I
C
(A)
Switching time – I
C
S
μ
s
Gate resistance R
G
(
)
Switching time – R
G
S
μ
s
Gate resistance R
G
(
)
Switching time – R
G
Collector current I
C
(A)
Switching loss – I
C
Gate resistance R
G
(
)
Switching loss – R
G
S
0.01
10
0.1
1
100
1000
: Tc
=
25°C
: Tc
=
125°C
Common emitter
VCC
=
600 V
VGE
=
±
15 V
RG
=
2.4
tr
ton
td (on)
1
10
1000
0
40
20
Eon
Eoff
Edsw
: Tc
=
25°C
: Tc
=
125°C
Common emitter
VCC
=
600 V
IC
=
400 A
VGE
=
±
15 V
100
10
30
0.01
0.1
10
0
40
20
Common emitter
VCC
=
600 V
IC
=
400 A
VGE
=
±
15 V
toff
td (off)
tf
1
10
30
: Tc
=
25°C
: Tc
=
125°C
0.01
10
0.1
1
100
1000
toff
td (off)
tf
Common emitter
VCC
=
600 V
VGE
=
±
15 V
RG
=
2.4
: Tc
=
25°C
: Tc
=
125°C
1
100
0
500
200
Eoff
Edsw
Eon
: Tc
=
25°C
: Tc
=
125°C
Common emitter
VCC
=
600 V
VGE
=
±
15 V
RG
=
2.4
10
100
300
400
0.01
0.1
1
0
40
20
tr
td (on)
ton
Common emitter
VCC
=
600 V
IC
=
400 A
VGE
=
±
15 V
30
10
: Tc
=
25°C
: Tc
=
125°C
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