參數(shù)資料
型號(hào): MGA-412P8-TR2G
廠商: Avago Technologies Ltd.
英文描述: GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
中文描述: GaAs增強(qiáng)模式pHEMT功率放大器優(yōu)化的IEEE 802.11b / g應(yīng)用
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 135K
代理商: MGA-412P8-TR2G
3
Symbol
Parameter
Units
MIN
TYP
MAX
Idq
Quiescent current
mA
40
55
Isd
Current drawn by Shutdown pin
mA
0.5
I_leak
Total current consumption at shutdown(Vsd=0V)
uA
5
G
Gain
dB
23
25.5
Psat
Saturated Power
dBm
27
P1dB
1 dB Compression Point
dBm
24
25.3
Gain Flatness (2.4 - 2.5GHz)
dB
1
Poutn
Max Pout per IEEE 802.11b mask (CCCK modulation)
dBm
23
Idn
Current @ 23dBm 802.11b BPSK
mA
200
Poutl
Linear Power @ 3% EVM, 54Mbps OFDM
dBm
19
Idl
Current @ 3% EVM
mA
95
S11
Input Return Loss
dB
-5.5
S22
Output Return Loss
dB
-11.5
S12
Isolation
dB
>40
OIP3
Large Signal, Output IP3 (2-tone at ± 10MHz from carrier
freq)
dBm
38
Electrical Specifications[6]
Tc = 25 °C, 2.452 GHz [typical, measured on demo board].DC bias for RF parameters Vdd =Vsd=3.3V
Unless otherwise specified, all data are taken with OFDM 64-QAM modulated signal per IEEE802.11g
specifications at 54Mbps data rate.
Notes:
6. Measurements taken on demo board as shown on Figure 4. Excess circuit losses have been de-embedded from actual measurements.
Standard deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this
product may have nominal values any where within the upper and lower spec limits.
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