參數(shù)資料
型號(hào): MGP19N35CL
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Ignition IGBT 19 Amps, 350 Volts(19A,350V鉗位電壓,點(diǎn)火絕緣柵雙極型晶體管(TO-220封裝))
中文描述: 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 7/12頁
文件大?。?/td> 72K
代理商: MGP19N35CL
MGP19N35CL, MGB19N35CL
http://onsemi.com
7
100
10
0.1
1
0.01
COLLECTOR–EMITTER VOLTAGE (VOLTS)
COLLECTOR–EMITTER VOLTAGE (VOLTS)
C
C
1
100
10
1000
100
10
0.1
1
0.011
100
10
1000
DC
t1 = 1 ms, D = 0.05
DC
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
t1 = 1 ms, D = 0.05
t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
100
10
0.1
1
0.01
Figure 15. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 25 C)
COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 16. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 125 C)
COLLECTOR–EMITTER VOLTAGE (VOLTS)
C
C
1
100
10
1000
100
10
0.1
1
0.011
100
10
1000
100
μ
s
1 ms
10 ms
100 ms
DC
100
μ
s
1 ms
10 ms
100 ms
DC
Figure 17. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 25 C)
Figure 18. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 125 C)
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