參數(shù)資料
型號(hào)： MH16S72AMA-8
廠商： Mitsubishi Electric Corporation
元件分類： 圓形連接器
英文描述： Circular Connector; No. of Contacts:3; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:12-3 RoHS Compliant: No
中文描述： 1207959552位（16777216 - Word的72位）SynchronousDRAM
文件頁(yè)數(shù)： 15/52頁(yè)
文件大?。?/td> 1045K
代理商： MH16S72AMA-8
MH16S72AMA -8,-10,-12
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
MITSUBISHI LSIs
( / 52 )
15
MITSUBISHI
ELECTRIC
5. Mar.1997
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0128-0.0
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent a
SDRAM from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQMB0-7 high and NOP
condition at the inputs.
2. Maintain stable power, stable cock, and NOP input conditions for a minimum of 500μs.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode
register(MRS). The mode register stores these date until the next MRS command, which may
be issue when both banks are in idle state. After tRSC from a MRS command, the SDRAM is
ready for new command.
R:Reserved for Future Use
/S
/RAS
/CAS
/WE
BA0,1 A11-0
CK
V
BL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
BURST
LENGTH
BT= 0
1
2
4
8
R
R
R
R
BT= 1
1
2
4
8
R
R
R
R
0
1
BURST
TYPE
SEQUENTIAL
INTERLEAVED
A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA1
BA0
0
0
0
0
0
LTMODE
BT
BL
0
0
CL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
LATENCY
MODE
/CAS LATENCY
2
3
R
R
R
R
R
R
相關(guān)PDF資料
PDF描述
MH16S72DDFA-7 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH16S72DDFA-8 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH16S72VJB-6 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH16S72APHB-6 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM
MH16S72APHB-7 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MH16S72APHB-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM
MH16S72APHB-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM
MH16S72APHB-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM
MH16S72AVJB-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH16S72BAMD-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
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