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參數(shù)資料
| 型號(hào)： | MH16S72BDFA-8 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| 中文描述： | 1207959552位（16,777,216字72位）同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 30/52頁(yè) |
| 文件大小： | 1045K |
| 代理商： | MH16S72BDFA-8 |
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MH16S72AMA -8,-10,-12
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
MITSUBISHI LSIs
( / 52 )
30
MITSUBISHI
ELECTRIC
5. Mar.1997
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0128-0.0
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Symbol
Parameter
Test Condition
Limits
Min. Max.
2.4
Unit
VOH(DC) High-Level Output Voltage(DC)
VOL(DC) Low-Level Output Voltage(DC)
VIOZ
)
IOZ
Off-stare Output Current
Ii
Input
Current
IOH=-2mA
IOL=2mA
CL=50pF,
IOH=-2mA
Q floating VO=0 ` Vdd
VIH=0 ` Vdd+0.3V
V
V
V
V
0.4
10
0.8
High-Level Output Voltage(AC)
Off-stare Output Current
Input Current
2
1
0
8
0
-1
0
0
é A
é
A
Symbol
Parameter
Test Condition
Limits(max)
-10
1710
1530 1350
2340
2070 1890
450
396
36
900
810
2070 1890
2340
2070 1890
18
Unit
-8
-12
Icc1s
Icc1d
Icc2h
Icc2l
Icc3
Icc4
Icc5
Icc6
operating current, singl(discrete)
operating current, dual (discrete)
standby current, CKE=H
standby current, CKE=L
active standby current
burst current
auto-refresh current
self-refresh current
tRC=min.tCLK=min, BL=1, CL=3
tRC=min.tCLK=min, BL=1, CL=3
both banks idle, tCLK=min, CKE=H
both banks idle, tCLK=min, CKE=L
both banks active, tCLK=min, CKE=H
mA
mA
360
36
720
mA
mA
mA
mA
mA
mA
36
tCLK=min, BL=4, CL=3, both banks active(discerte)
2340
tRC=min, tCLK=min
CKE <0.2V
18
18
Ii
Q floating VO=0 ~ Vdd
VIH=0 ~ Vdd+0.3V
-10
-180
uA
uA
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| MH16S72DCFA-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
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